Part Details for TPM1818-30 by Toshiba America Electronic Components
Overview of TPM1818-30 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for TPM1818-30
TPM1818-30 CAD Models
TPM1818-30 Part Data Attributes
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TPM1818-30
Toshiba America Electronic Components
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Datasheet
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TPM1818-30
Toshiba America Electronic Components
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 15 V | |
| Drain Current-Max (ID) | 20 A | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for TPM1818-30
This table gives cross-reference parts and alternative options found for TPM1818-30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPM1818-30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NES1821B-30 | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-79, 2 PIN | NEC Electronics Group | TPM1818-30 vs NES1821B-30 |
| NES1821B-30 | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | TPM1818-30 vs NES1821B-30 |
| FLL300IP-2 | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 | FUJITSU Limited | TPM1818-30 vs FLL300IP-2 |
| FLL300IP-2 | L BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 | FUJITSU Semiconductor Limited | TPM1818-30 vs FLL300IP-2 |
| NES1821P-50 | RF Power Field-Effect Transistor, 2-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-86, 4 PIN | NEC Electronics Group | TPM1818-30 vs NES1821P-50 |