Part Details for TPHR6503PL by Toshiba America Electronic Components
Overview of TPHR6503PL by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TPHR6503PL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TPHR6503PL,L1Q
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Avnet Americas | Trans MOSFET N-CH 30V 150A 8-Pin SOP - Tape and Reel (Alt: TPHR6503PL,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 32 Weeks, 0 Days Container: Reel | 0 |
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$0.8525 / $1.0190 | Buy Now |
DISTI #
TPHR6503PL,L1Q
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Avnet Asia | Trans MOSFET N-CH 30V 150A 8-Pin SOP (Alt: TPHR6503PL,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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Win Source Electronics | MOSFET 30 Volt N-Channel | 5 |
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Buy Now |
Part Details for TPHR6503PL
TPHR6503PL CAD Models
TPHR6503PL Part Data Attributes:
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TPHR6503PL
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TPHR6503PL
Toshiba America Electronic Components
SMALL SIGNAL, FET
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SOP-8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 32 Weeks | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 374 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 150 A | |
Drain-source On Resistance-Max | 0.00089 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 220 pF | |
JESD-30 Code | S-PDSO-F8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 170 W | |
Pulsed Drain Current-Max (IDM) | 500 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |