Datasheets
TPH7R506NH,L1Q(M by: Toshiba America Electronic Components

TPH7R506NH,L1Q(M

Part Details for TPH7R506NH,L1Q(M by Toshiba America Electronic Components

Overview of TPH7R506NH,L1Q(M by Toshiba America Electronic Components

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Price & Stock for TPH7R506NH,L1Q(M

Part # Distributor Description Stock Price Buy
DISTI # 72AK4628
Newark Mosfet, N-Ch, 60V, 55A, Sop Advance, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:55A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TPH7R506NH, L1Q(M RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 4986
  • 1 $0.3690
  • 10 $0.3690
  • 25 $0.3690
  • 50 $0.3690
  • 100 $0.3690
  • 250 $0.3690
  • 500 $0.3690
  • 1,000 $0.3690
$0.3690 Buy Now
DISTI # 79370739
Verical Trans MOSFET N-CH Si 60V 55A 8-Pin SOP Advance T/R RoHS: Compliant Min Qty: 116 Package Multiple: 1 Date Code: 2143 Americas - 9627
  • 106 $0.2975
  • 200 $0.2937
  • 500 $0.2888
  • 1,000 $0.2838
  • 5,000 $0.2738
$0.2738 / $0.2975 Buy Now
DISTI # C1S751201064033
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 9627
  • 5 $0.2430
  • 10 $0.2320
  • 50 $0.2250
  • 100 $0.2170
  • 200 $0.2150
  • 500 $0.2120
  • 1,000 $0.2070
  • 5,000 $0.2000
$0.2000 / $0.2430 Buy Now
DISTI # TPH7R506NH,L1Q(M
EBV Elektronik Trans MOSFET N 60V 55A 8-Pin SOP (Alt: TPH7R506NH,L1Q(M) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for TPH7R506NH,L1Q(M

TPH7R506NH,L1Q(M CAD Models

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TPH7R506NH,L1Q(M Part Data Attributes

TPH7R506NH,L1Q(M Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
TPH7R506NH,L1Q(M Toshiba America Electronic Components TPH7R506NH,L1Q(M
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, S-PDSO-F5
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 132 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 66 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TPH7R506NH,L1Q(M

This table gives cross-reference parts and alternative options found for TPH7R506NH,L1Q(M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPH7R506NH,L1Q(M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SHD219501 Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-3 Sensitron Semiconductors TPH7R506NH,L1Q(M vs SHD219501
BUK7520-55127 TRANSISTOR 52 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors TPH7R506NH,L1Q(M vs BUK7520-55127
BUK7520-55,127 52A, 55V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB NXP Semiconductors TPH7R506NH,L1Q(M vs BUK7520-55,127
STP16NF06LT4 55A, 60V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STMicroelectronics TPH7R506NH,L1Q(M vs STP16NF06LT4
STB55NF06L-1 55A, 60V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 STMicroelectronics TPH7R506NH,L1Q(M vs STB55NF06L-1

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