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Transistors / Power Field-Effect Transistors / TPH3300CNH,L1Q(M
Datasheets
TPH3300CNH,L1Q(M by: Toshiba America Electronic Components

Power Field-Effect Transistor, 18A I(D), 150V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for TPH3300CNH,L1Q(M by Toshiba America Electronic Components

Results Overview of TPH3300CNH,L1Q(M by Toshiba America Electronic Components

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Applications Consumer Electronics Industrial Automation

TPH3300CNH,L1Q(M Information

TPH3300CNH,L1Q(M by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
5962-9762201QEA Texas Instruments Quad LVDS Receiver 16-CDIP -55 to 125
SN65LV1023ARHBR Texas Instruments 10:1 LVDS Serdes Transmitter 100 - 660Mbps 32-VQFN -40 to 85
SN65LV1224BDBR Texas Instruments 1:10 LVDS Serdes Receiver 100 - 660Mbps 28-SSOP -40 to 85

Price & Stock for TPH3300CNH,L1Q(M

Part # Distributor Description Stock Price Buy
DISTI # 09AK8990
Newark Mosfet, N-Ch, 150V, 29A, Sop, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous D... rain Current Id:29A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Product Range:- Rohs Compliant: Yes |Toshiba TPH3300CNH, L1Q(M more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 580
  • 1 $0.6770
  • 10 $0.6770
  • 25 $0.6770
  • 50 $0.6770
  • 100 $0.6210
  • 250 $0.5730
$0.5730 / $0.6770 Buy Now
DISTI # 86AK6550
Newark Mosfet, N-Ch, 150V, 29A, Sop Rohs Compliant: Yes |Toshiba TPH3300CNH, L1Q(M RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $0.6400
  • 10,000 $0.5800
  • 20,000 $0.5230
  • 30,000 $0.5030
  • 50,000 $0.4920
$0.4920 / $0.6400 Buy Now
DISTI # TPH3300CNH,L1Q(M
Avnet Asia Trans MOSFET N-CH 150V 18A 8-Pin SOP (Alt: TPH3300CNH,L1Q(M) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # TPH3300CNH,L1Q(M
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 5000
  • 1 $1.0400
  • 10 $0.7000
  • 50 $0.6500
  • 100 $0.5480
  • 200 $0.5180
  • 1,000 $0.4670
$0.4670 / $1.0400 Buy Now
DISTI # TPH3300CNH,L1Q(M
EBV Elektronik Trans MOSFET NCH 150V 18A 8Pin SOP (Alt: TPH3300CNH,L1Q(M) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 7160
RFQ

Part Details for TPH3300CNH,L1Q(M

TPH3300CNH,L1Q(M CAD Models

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TPH3300CNH,L1Q(M Part Data Attributes

Parametric Data
TPH3300CNH,L1Q(M Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
TPH3300CNH,L1Q(M Toshiba America Electronic Components Power Field-Effect Transistor, 18A I(D), 150V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 53 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 50 pF
JESD-30 Code S-PDSO-F8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 57 W
Pulsed Drain Current-Max (IDM) 61 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

TPH3300CNH,L1Q(M Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.

  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation according to the temperature derating curve in the datasheet.

  • Handle the device by the body, not the leads. Store the device in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and use anti-static packaging and handling procedures.

  • Yes, but ensure you follow the recommended design and manufacturing guidelines for high-reliability or automotive applications. Additionally, consult with Toshiba's application engineers to ensure the device meets the specific requirements of your application.

  • Consult the datasheet and application notes for troubleshooting guidelines. Check for proper PCB layout, thermal management, and power supply quality. Use oscilloscopes and other diagnostic tools to identify the root cause of the issue.