Part Details for TPH1R712MD by Toshiba America Electronic Components
Overview of TPH1R712MD by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Agriculture Technology
Renewable Energy
Robotics and Drones
Price & Stock for TPH1R712MD
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TPH1R712MD,L1Q
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Avnet Americas | Trans MOSFET P-CH 20V 60A 8-Pin SOP - Tape and Reel (Alt: TPH1R712MD,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 24 Weeks, 0 Days Container: Reel | 25000 |
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$0.4741 / $0.5084 | Buy Now |
Part Details for TPH1R712MD
TPH1R712MD CAD Models
TPH1R712MD Part Data Attributes:
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TPH1R712MD
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TPH1R712MD
Toshiba America Electronic Components
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Pch Power MOSFET
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 468 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1550 pF | |
| JESD-30 Code | S-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 78 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |