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Transistors / Power Field-Effect Transistors / TPH1R712MD,L1Q
Datasheets
TPH1R712MD,L1Q by: Toshiba America Electronic Components

MOSFET P-CH 20V 60A 8SOP ADV

Part Details for TPH1R712MD,L1Q by Toshiba America Electronic Components

Results Overview of TPH1R712MD,L1Q by Toshiba America Electronic Components

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Applications Environmental Monitoring Industrial Automation Energy and Power Systems Transportation and Logistics Agriculture Technology Renewable Energy Robotics and Drones

TPH1R712MD,L1Q Information

TPH1R712MD,L1Q by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for TPH1R712MD,L1Q

Part # Distributor Description Stock Price Buy
DISTI # TPH1R712MDL1QCT-ND
DigiKey MOSFET P-CH 20V 60A 8SOP Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 11313
In Stock
  • 1 $1.8300
  • 10 $1.2580
  • 100 $0.8502
  • 500 $0.6757
  • 1,000 $0.6017
  • 2,000 $0.5724
  • 5,000 $0.5363
$0.5363 / $1.8300 Buy Now
DISTI # TPH1R712MD,L1Q
Avnet Americas Power MOSFET, P Channel, 20 V, 60 A, 1.7 Milliohms, SOP Advance, 8 Pins, Surface Mount - Tape and Re... el (Alt: TPH1R712MD,L1Q) more RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 20000
  • 5,000 $0.4055
$0.4055 Buy Now
DISTI # 757-TPH1R712MDL1Q
Mouser Electronics MOSFETs P-Channel Mosfet 20V UMOS-VI RoHS: Compliant 9872
  • 1 $1.7400
  • 10 $1.2100
  • 100 $0.8510
  • 500 $0.6760
  • 1,000 $0.5730
  • 5,000 $0.5360
$0.5360 / $1.7400 Buy Now
Vyrian Transistors 14185
RFQ

Part Details for TPH1R712MD,L1Q

TPH1R712MD,L1Q CAD Models

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TPH1R712MD,L1Q Part Data Attributes

Parametric Data
TPH1R712MD,L1Q Toshiba America Electronic Components
Buy Now Datasheet
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TPH1R712MD,L1Q Toshiba America Electronic Components MOSFET P-CH 20V 60A 8SOP ADV
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Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SOP-8
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 468 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1550 pF
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 78 W
Pulsed Drain Current-Max (IDM) 200 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

TPH1R712MD,L1Q Frequently Asked Questions (FAQ)

  • A recommended PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad to the ground plane. This helps to dissipate heat efficiently.

  • To ensure the device is properly biased, follow the recommended operating conditions and biasing circuits outlined in the datasheet. Additionally, ensure that the input and output capacitors are properly selected and placed close to the device to minimize parasitic inductance.

  • Exceeding the maximum junction temperature can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It is essential to ensure that the device is operated within the recommended temperature range to maintain reliability and performance.

  • To protect the device from overvoltage and overcurrent conditions, consider using overvoltage protection (OVP) circuits and overcurrent protection (OCP) circuits. These can be implemented using external components such as zener diodes, resistors, and fuses.

  • To prevent damage, store the device in a cool, dry place away from direct sunlight and moisture. Handle the device by the body, avoiding touching the pins or leads to prevent electrostatic discharge (ESD) damage.