Datasheets
TPH1400ANH,L1Q by: Toshiba America Electronic Components

Power MOSFET - Nch 60V<VDSS≤150V

Part Details for TPH1400ANH,L1Q by Toshiba America Electronic Components

Overview of TPH1400ANH,L1Q by Toshiba America Electronic Components

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Applications Healthcare

Price & Stock for TPH1400ANH,L1Q

Part # Distributor Description Stock Price Buy
DISTI # TPH1400ANHL1QCT-ND
DigiKey MOSFET N CH 100V 24A 8-SOP Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $1.9800
  • 10 $1.2660
  • 100 $0.8562
  • 500 $0.6803
  • 1,000 $0.6237
  • 2,000 $0.5760
  • 5,000 $0.5363
$0.5363 / $1.9800 Buy Now
DISTI # TPH1400ANH,L1Q
Avnet Americas Trans MOSFET N 100V 42A 8-Pin SOP - Tape and Reel (Alt: TPH1400ANH,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.6564
  • 10,000 $0.6392
  • 20,000 $0.6092
  • 30,000 $0.5920
  • 40,000 $0.5792
  • 50,000 $0.5620
  • 500,000 $0.5491
$0.5491 / $0.6564 Buy Now
DISTI # 757-TPH1400ANHL1Q
Mouser Electronics MOSFETs N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC RoHS: Compliant 0
  • 1 $1.9800
  • 10 $1.2700
  • 100 $0.8570
  • 500 $0.7150
$0.7150 / $1.9800 Order Now

Part Details for TPH1400ANH,L1Q

TPH1400ANH,L1Q CAD Models

TPH1400ANH,L1Q Part Data Attributes

TPH1400ANH,L1Q Toshiba America Electronic Components
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TPH1400ANH,L1Q Toshiba America Electronic Components Power MOSFET - Nch 60V<VDSS≤150V
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Reach Compliance Code unknown
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 46 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.0136 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 50 pF
JESD-30 Code S-PDSO-F8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 91 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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