-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power MOSFET - Nch 60V<VDSS≤150V
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
TPH1400ANHL1QCT-ND
|
DigiKey | MOSFET N CH 100V 24A 8-SOP Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.5363 / $1.9800 | Buy Now |
DISTI #
TPH1400ANH,L1Q
|
Avnet Americas | Trans MOSFET N 100V 42A 8-Pin SOP - Tape and Reel (Alt: TPH1400ANH,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.5491 / $0.6564 | Buy Now |
DISTI #
757-TPH1400ANHL1Q
|
Mouser Electronics | MOSFETs N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC RoHS: Compliant | 0 |
|
$0.7150 / $1.9800 | Order Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
TPH1400ANH,L1Q
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TPH1400ANH,L1Q
Toshiba America Electronic Components
Power MOSFET - Nch 60V<VDSS≤150V
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | unknown | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 46 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.0136 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 50 pF | |
JESD-30 Code | S-PDSO-F8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 91 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |