Datasheets
TPC8003 by: Toshiba America Electronic Components

TRANSISTOR 13 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-6J1B, 8 PIN, FET General Purpose Power

Part Details for TPC8003 by Toshiba America Electronic Components

Overview of TPC8003 by Toshiba America Electronic Components

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Part Details for TPC8003

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TPC8003 Part Data Attributes

TPC8003 Toshiba America Electronic Components
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TPC8003 Toshiba America Electronic Components TRANSISTOR 13 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-6J1B, 8 PIN, FET General Purpose Power
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer TOSHIBA CORP
Package Description 2-6J1B, 8 PIN
Pin Count 8
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 220 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TPC8003

This table gives cross-reference parts and alternative options found for TPC8003. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPC8003, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UPA2702GR-A Power Field-Effect Transistor, 13A I(D), 30V, 0.0172ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 NEC Electronics Group TPC8003 vs UPA2702GR-A
TPCA8005-H TRANSISTOR 27 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power Toshiba America Electronic Components TPC8003 vs TPCA8005-H
TPC8001 TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-6J1A, 8 PIN, FET General Purpose Power Toshiba America Electronic Components TPC8003 vs TPC8001
UPA2700GR Power Field-Effect Transistor, 17A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 NEC Electronics Group TPC8003 vs UPA2700GR
FSS244 Power Field-Effect Transistor, 10A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd TPC8003 vs FSS244
UPA2700GR-A Power Field-Effect Transistor, 17A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 NEC Electronics Group TPC8003 vs UPA2700GR-A
UPA2702GR Power Field-Effect Transistor, 13A I(D), 30V, 0.0172ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 NEC Electronics Group TPC8003 vs UPA2702GR
IRF7460TR Power Field-Effect Transistor, 12A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier TPC8003 vs IRF7460TR

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