There are no models available for this part yet.
Overview of TN5325N3 by Supertex Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Automotive
CAD Models for TN5325N3 by Supertex Inc
Part Data Attributes for TN5325N3 by Supertex Inc
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
SUPERTEX INC
|
Part Package Code
|
TO-92
|
Package Description
|
CYLINDRICAL, O-PBCY-W3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
HIGH INPUT IMPEDANCE
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
250 V
|
Drain Current-Max (ID)
|
0.215 A
|
Drain-source On Resistance-Max
|
7 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
23 pF
|
JEDEC-95 Code
|
TO-92
|
JESD-30 Code
|
O-PBCY-W3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
ROUND
|
Package Style
|
CYLINDRICAL
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
0.74 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
WIRE
|
Terminal Position
|
BOTTOM
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for TN5325N3
This table gives cross-reference parts and alternative options found for TN5325N3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TN5325N3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
TP0604N3-GP003 | SMALL SIGNAL, FET | Microchip Technology Inc | TN5325N3 vs TP0604N3-GP003 |
RJP020N06T100 | Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN | ROHM Semiconductor | TN5325N3 vs RJP020N06T100 |
RQK0604IGDQATL-E | 2000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-59A, MPAK-3 | Renesas Electronics Corporation | TN5325N3 vs RQK0604IGDQATL-E |
2N7002 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Samsung Semiconductor | TN5325N3 vs 2N7002 |
2N7002 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Diodes Incorporated | TN5325N3 vs 2N7002 |
2SK163 | Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, | NEC Electronics America Inc | TN5325N3 vs 2SK163 |
2SK1839-TL | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SANYO Semiconductor Co Ltd | TN5325N3 vs 2SK1839-TL |
2SK303TB | Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, CP, 3 PIN | SANYO Electric Co Ltd | TN5325N3 vs 2SK303TB |
2SK105J | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, | NEC Electronics America Inc | TN5325N3 vs 2SK105J |
TP0604N3-GP002 | SMALL SIGNAL, FET | Microchip Technology Inc | TN5325N3 vs TP0604N3-GP002 |
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