Datasheets
TN0610N5 by: Supertex Inc

Power Field-Effect Transistor, 3A I(D), 100V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for TN0610N5 by Supertex Inc

Results Overview of TN0610N5 by Supertex Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

TN0610N5 Information

TN0610N5 by Supertex Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for TN0610N5

Part # Distributor Description Stock Price Buy
Quest Components   157
  • 1 $5.6400
  • 19 $3.7600
  • 67 $3.4780
$3.4780 / $5.6400 Buy Now

Part Details for TN0610N5

TN0610N5 CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

TN0610N5 Part Data Attributes

TN0610N5 Supertex Inc
Buy Now Datasheet
Compare Parts:
TN0610N5 Supertex Inc Power Field-Effect Transistor, 3A I(D), 100V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Select a part to compare:
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SUPERTEX INC
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW THRESHOLD
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 35 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 45 W
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 4.1 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 32 ns
Turn-on Time-Max (ton) 20 ns