Part Details for TK8P65W by Toshiba America Electronic Components
Overview of TK8P65W by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for TK8P65W
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
TK8P65W,RQ
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Avnet Americas | MOSFET N-Channel Enhancement Mode 650V 3-Pin DPAK - Tape and Reel (Alt: TK8P65W,RQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
|
$0.8946 / $1.1415 | Buy Now |
|
DISTI #
TK8P65W,RQ
|
Avnet Americas | MOSFET N-Channel Enhancement Mode 650V 3-Pin DPAK - Tape and Reel (Alt: TK8P65W,RQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
|
$0.8946 / $1.1415 | Buy Now |
|
DISTI #
TK8P65W,RQ
|
Avnet Americas | MOSFET N-Channel Enhancement Mode 650V 3-Pin DPAK - Tape and Reel (Alt: TK8P65W,RQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
|
$0.8946 / $1.1415 | Buy Now |
|
|
Chip1Cloud | 6700 |
|
RFQ |
Part Details for TK8P65W
TK8P65W CAD Models
TK8P65W Part Data Attributes:
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TK8P65W
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK8P65W
Toshiba America Electronic Components
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 1 Day | |
| Avalanche Energy Rating (Eas) | 102 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 7.8 A | |
| Drain-source On Resistance-Max | 0.67 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 31.2 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK8P65W
This table gives cross-reference parts and alternative options found for TK8P65W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK8P65W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TK8Q65W | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | Toshiba America Electronic Components | TK8P65W vs TK8Q65W |