Part Details for TK8A50DA by Toshiba America Electronic Components
Overview of TK8A50DA by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for TK8A50DA
TK8A50DA CAD Models
TK8A50DA Part Data Attributes:
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TK8A50DA
Toshiba America Electronic Components
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Datasheet
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TK8A50DA
Toshiba America Electronic Components
TRANSISTOR 7.5 A, 500 V, 1.04 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SC-67 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 7.5 A | |
| Drain-source On Resistance-Max | 1.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK8A50DA
This table gives cross-reference parts and alternative options found for TK8A50DA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK8A50DA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFM440DPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | TK8A50DA vs IRFM440DPBF |
| IRFM440UPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | TK8A50DA vs IRFM440UPBF |
| TK8A45D | TRANSISTOR 8 A, 450 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | TK8A50DA vs TK8A45D |
| IRFM440PBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | TK8A50DA vs IRFM440PBF |
| PJF840 | Power Field-Effect Transistor, 8A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN | PanJit Semiconductor | TK8A50DA vs PJF840 |
| PJF8NA50_T0_00001 | Power Field-Effect Transistor, 8A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220AB-F, 3 PIN | PanJit Semiconductor | TK8A50DA vs PJF8NA50_T0_00001 |
| PJP8NA50_T0_00001 | Power Field-Effect Transistor, 8A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | PanJit Semiconductor | TK8A50DA vs PJP8NA50_T0_00001 |