Datasheets
TK72A12N1 by: Toshiba America Electronic Components

TRANSISTOR POWER, FET, FET General Purpose Power

Part Details for TK72A12N1 by Toshiba America Electronic Components

Overview of TK72A12N1 by Toshiba America Electronic Components

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Applications Consumer Electronics Renewable Energy

Price & Stock for TK72A12N1

Part # Distributor Description Stock Price Buy
Chip1Cloud MOSFET N-CH 120V 72A TO-220 2270
RFQ

Part Details for TK72A12N1

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TK72A12N1 Part Data Attributes

TK72A12N1 Toshiba America Electronic Components
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TK72A12N1 Toshiba America Electronic Components TRANSISTOR POWER, FET, FET General Purpose Power
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 256 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 120 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 355 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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