|
|
|
|---|---|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
TOSHIBA CORP
|
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Toshiba
|
|
Avalanche Energy Rating (Eas)
|
84 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
600 V
|
|
Drain Current-Max (ID)
|
6.2 A
|
|
Drain-source On Resistance-Max
|
0.82 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
60 W
|
|
Pulsed Drain Current-Max (IDM)
|
24.8 A
|
|
Surface Mount
|
YES
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
