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Part Details for TK6A60W by Toshiba America Electronic Components
Overview of TK6A60W by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for TK6A60W
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | Trans MOSFET N-CH Si 600V 6.2A 3-Pin(3+Tab) TO-220SIS / MOSFET N CH 600V 6.2A TO-220SIS | 150030 |
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$0.0020 / $0.0030 | Buy Now |
Part Details for TK6A60W
TK6A60W CAD Models
TK6A60W Part Data Attributes
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TK6A60W
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK6A60W
Toshiba America Electronic Components
Nch 500V<VDSS≤700V
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 84 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 6.2 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 24.8 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK6A60W
This table gives cross-reference parts and alternative options found for TK6A60W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK6A60W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STF9NM60N | STMicroelectronics | $2.0168 | N-channel 600 V, 0.63 Ohm, 6.5 A TO-220FP MDmesh(TM) II Power MOSFET | TK6A60W vs STF9NM60N |
| TK7A65W | Toshiba America Electronic Components | Check for Price | Nch 500V<VDSS≤700V, Power MOSFET | TK6A60W vs TK7A65W |
| SSF7NS70UF | Suzhou Good-Ark Electronics Co Ltd | Check for Price | Power Field-Effect Transistor, 7A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | TK6A60W vs SSF7NS70UF |
| SPA06N60C3XKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3 | TK6A60W vs SPA06N60C3XKSA1 |