Part Details for TK5A90E,S4X(S by Toshiba America Electronic Components
Overview of TK5A90E,S4X(S by Toshiba America Electronic Components
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TK5A90E,S4X(S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
72AK4538
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Newark | Mosfet, N-Ch, 900V, 4.5A, To-220Sis, Channel Type:N Channel, Drain Source Voltage Vds:900V, Continuous Drain Current Id:4.5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK5A90E,S4X(S Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 25 |
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$0.6730 / $1.5300 | Buy Now |
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DISTI #
76480513
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Verical | TK5A90E,S4X(S Min Qty: 30 Package Multiple: 1 | Americas - 85 |
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$0.9838 / $1.0587 | Buy Now |
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Ameya Holding Limited | 37500 |
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RFQ | ||
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DISTI #
TK5A90E,S4X(S
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Avnet Asia | Trans MOSFET N-CH 900V 4.5A 3-Pin SC-67 Tube (Alt: TK5A90E,S4X(S) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
C1S751201261201
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Chip1Stop | MOSFET RoHS: Compliant Container: Tube | 85 |
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$0.7870 / $1.2700 | Buy Now |
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DISTI #
4173124
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element14 Asia-Pacific | MOSFET, N-CH, 900V, 4.5A, TO-220SIS RoHS: Compliant Min Qty: 1 Container: Each | 25 |
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$0.6419 / $1.4050 | Buy Now |
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DISTI #
4173124
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Farnell | MOSFET, N-CH, 900V, 4.5A, TO-220SIS RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Each | 25 |
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$0.5550 / $1.6072 | Buy Now |
Part Details for TK5A90E,S4X(S
TK5A90E,S4X(S CAD Models
TK5A90E,S4X(S Part Data Attributes:
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TK5A90E,S4X(S
Toshiba America Electronic Components
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Datasheet
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TK5A90E,S4X(S
Toshiba America Electronic Components
Power Field-Effect Transistor, 4.5A I(D), 900V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | TO-220SIS, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 202 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 3.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 13.5 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |