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Part Details for TK5A90E,S4X by Toshiba America Electronic Components
Overview of TK5A90E,S4X by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TK5A90E,S4X
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
264-TK5A90E,S4X-ND
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DigiKey | PB-F POWER MOSFET TRANSISTOR TO- Min Qty: 1 Lead time: 20 Weeks Container: Tube |
47 In Stock |
|
$0.5250 / $1.3600 | Buy Now |
|
DISTI #
TK5A90E,S4X
|
Avnet Americas | MOSFET N-Channel Enhancement Mode 900V 3-Pin TO-220SIS - Rail/Tube (Alt: TK5A90E,S4X) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 53 Weeks, 1 Days Container: Tube | 0 |
|
$0.6090 / $0.7770 | Buy Now |
|
DISTI #
757-TK5A90ES4X
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Mouser Electronics | MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ RoHS: Compliant | 317 |
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$0.5600 / $1.4000 | Buy Now |
|
DISTI #
TK5A90E,S4X
|
Avnet Americas | MOSFET N-Channel Enhancement Mode 900V 3-Pin TO-220SIS - Rail/Tube (Alt: TK5A90E,S4X) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 53 Weeks, 1 Days Container: Tube | 0 |
|
$0.6090 / $0.7770 | Buy Now |
Part Details for TK5A90E,S4X
TK5A90E,S4X CAD Models
TK5A90E,S4X Part Data Attributes:
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TK5A90E,S4X
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK5A90E,S4X
Toshiba America Electronic Components
Power Field-Effect Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 1 Day | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 202 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 3.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 13.5 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |