Part Details for TK5A60W,S4VX by Toshiba America Electronic Components
Overview of TK5A60W,S4VX by Toshiba America Electronic Components
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
Price & Stock for TK5A60W,S4VX
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
TK5A60WS4VX-ND
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DigiKey | MOSFET N-CH 600V 5.4A TO220SIS Min Qty: 1 Lead time: 20 Weeks Container: Tube | Temporarily Out of Stock |
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$0.8500 / $1.9700 | Buy Now |
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DISTI #
TK5A60W,S4VX
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Avnet Americas | Trans MOSFET N 600V 5.4A 3-Pin TO-220SIS Tube - Rail/Tube (Alt: TK5A60W,S4VX) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 53 Weeks, 1 Days Container: Tube | 0 |
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$0.9860 / $1.2580 | Buy Now |
|
DISTI #
757-TK5A60WS4VX
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Mouser Electronics | MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC RoHS: Compliant | 137 |
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$0.8790 / $2.0800 | Buy Now |
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|
Quest Components | 112 |
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$0.9000 / $2.4000 | Buy Now | |
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DISTI #
TK5A60W,S4VX
|
Avnet Americas | Trans MOSFET N 600V 5.4A 3-Pin TO-220SIS Tube - Rail/Tube (Alt: TK5A60W,S4VX) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 53 Weeks, 1 Days Container: Tube | 0 |
|
$0.9860 / $1.2580 | Buy Now |
|
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Chip1Cloud | MOSFET N CH 600V 5.4A TO-220SIS | 38845 |
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RFQ |
Part Details for TK5A60W,S4VX
TK5A60W,S4VX CAD Models
TK5A60W,S4VX Part Data Attributes:
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TK5A60W,S4VX
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK5A60W,S4VX
Toshiba America Electronic Components
Power MOSFET - Nch 500V<VDSS≤700V
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SC-67, TO-220SIS, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 71 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 5.4 A | |
| Drain-source On Resistance-Max | 0.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.5 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 21.6 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |