Datasheets
TK55S10N1,LQ by: Toshiba America Electronic Components

MOSFET N-CH 100V 55A DPAK

Part Details for TK55S10N1,LQ by Toshiba America Electronic Components

Overview of TK55S10N1,LQ by Toshiba America Electronic Components

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Price & Stock for TK55S10N1,LQ

Part # Distributor Description Stock Price Buy
DISTI # TK55S10N1LQCT-ND
DigiKey MOSFET N-CH 100V 55A DPAK Min Qty: 1 Lead time: 32 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5343
In Stock
  • 1 $2.7700
  • 10 $2.3000
  • 100 $1.8307
  • 500 $1.5491
  • 1,000 $1.3144
  • 2,000 $1.2487
  • 6,000 $1.2017
$1.2017 / $2.7700 Buy Now
DISTI # TK55S10N1,LQ
Avnet Americas Trans MOSFET N-CH 100V 55A 3-Pin DPAK - Tape and Reel (Alt: TK55S10N1,LQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 53 Weeks, 1 Days Container: Reel 0
  • 2,000 $1.7723
  • 4,000 $1.6765
  • 8,000 $1.5807
  • 12,000 $1.4849
  • 16,000 $1.3891
$1.3891 / $1.7723 Buy Now
DISTI # 757-TK55S10N1LQ
Mouser Electronics MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK RoHS: Compliant 2711
  • 1 $2.8400
  • 10 $2.3700
  • 100 $1.8800
  • 250 $1.7400
  • 500 $1.5800
  • 1,000 $1.3500
  • 2,000 $1.2800
  • 4,000 $1.2300
$1.2300 / $2.8400 Buy Now
DISTI # TK55S10N1,LQ
Avnet Americas Trans MOSFET N-CH 100V 55A 3-Pin DPAK - Tape and Reel (Alt: TK55S10N1,LQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 53 Weeks, 1 Days Container: Reel 0
  • 2,000 $1.7723
  • 4,000 $1.6765
  • 8,000 $1.5807
  • 12,000 $1.4849
  • 16,000 $1.3891
$1.3891 / $1.7723 Buy Now
Chip1Cloud MOSFET N-CH 100V 55A DPAK 142445
RFQ

Part Details for TK55S10N1,LQ

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TK55S10N1,LQ Part Data Attributes:

TK55S10N1,LQ Toshiba America Electronic Components
Buy Now Datasheet
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TK55S10N1,LQ Toshiba America Electronic Components MOSFET N-CH 100V 55A DPAK
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description DPAK-3/2
Reach Compliance Code unknown
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 93 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.0065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 210 pF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 157 W
Pulsed Drain Current-Max (IDM) 165 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TK55S10N1,LQ

This table gives cross-reference parts and alternative options found for TK55S10N1,LQ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK55S10N1,LQ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TK55S10N1,LXHQ Power Field-Effect Transistor, 55A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Toshiba America Electronic Components TK55S10N1,LQ vs TK55S10N1,LXHQ

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