Part Details for TK55S10N1,LQ by Toshiba America Electronic Components
Overview of TK55S10N1,LQ by Toshiba America Electronic Components
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TK55S10N1,LQ
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK55S10N1LQCT-ND
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DigiKey | MOSFET N-CH 100V 55A DPAK Min Qty: 1 Lead time: 32 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5343 In Stock |
|
$1.2017 / $2.7700 | Buy Now |
DISTI #
TK55S10N1,LQ
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Avnet Americas | Trans MOSFET N-CH 100V 55A 3-Pin DPAK - Tape and Reel (Alt: TK55S10N1,LQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
|
$1.3891 / $1.7723 | Buy Now |
DISTI #
757-TK55S10N1LQ
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Mouser Electronics | MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK RoHS: Compliant | 2711 |
|
$1.2300 / $2.8400 | Buy Now |
DISTI #
TK55S10N1,LQ
|
Avnet Americas | Trans MOSFET N-CH 100V 55A 3-Pin DPAK - Tape and Reel (Alt: TK55S10N1,LQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
|
$1.3891 / $1.7723 | Buy Now |
|
Chip1Cloud | MOSFET N-CH 100V 55A DPAK | 142445 |
|
RFQ |
Part Details for TK55S10N1,LQ
TK55S10N1,LQ CAD Models
TK55S10N1,LQ Part Data Attributes:
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TK55S10N1,LQ
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK55S10N1,LQ
Toshiba America Electronic Components
MOSFET N-CH 100V 55A DPAK
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | unknown | |
Factory Lead Time | 53 Weeks, 1 Day | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 93 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 55 A | |
Drain-source On Resistance-Max | 0.0065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 210 pF | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 157 W | |
Pulsed Drain Current-Max (IDM) | 165 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for TK55S10N1,LQ
This table gives cross-reference parts and alternative options found for TK55S10N1,LQ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK55S10N1,LQ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
TK55S10N1,LXHQ | Power Field-Effect Transistor, 55A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Toshiba America Electronic Components | TK55S10N1,LQ vs TK55S10N1,LXHQ |