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Part Details for TK31J60W by Toshiba America Electronic Components
Results Overview of TK31J60W by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Space Technology
Aerospace and Defense
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
TK31J60W Information
TK31J60W by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for TK31J60W
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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Win Source Electronics | Switching Voltage Regulators | 1730 |
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$4.5139 / $6.7708 | Buy Now |
Part Details for TK31J60W
TK31J60W CAD Models
TK31J60W Part Data Attributes
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TK31J60W
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK31J60W
Toshiba America Electronic Components
Nch 500V<VDSS≤700V
Select a part to compare: |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | 2-16C1S, SC-65, TO-3P(N), 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 437 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 30.8 A | |
| Drain-source On Resistance-Max | 0.088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 123 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK31J60W
This table gives cross-reference parts and alternative options found for TK31J60W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK31J60W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP36N55M5 | STMicroelectronics | $1.2416 | N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package | TK31J60W vs STP36N55M5 |
| TK31E60X | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | TK31J60W vs TK31E60X |