-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for TK2K2A60F by Toshiba America Electronic Components
Overview of TK2K2A60F by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TK2K2A60F | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 600 V, 3.5 A, 2.2 Ohm@10V, TO-220SIS |
Price & Stock for TK2K2A60F
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
TK2K2A60F,S4X
|
Avnet Americas | MOSFET N-Channel Enhancement Mode 600V 3-Pin TO-220SIS - Rail/Tube (Alt: TK2K2A60F,S4X) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$0.3240 / $0.3672 | Buy Now |
|
DISTI #
TK2K2A60F
|
TME | Transistor: N-MOSFET, unipolar, 600V, 3.5A, Idm: 14A, 30W, TO220FP Min Qty: 1 | 0 |
|
$0.6040 / $0.9050 | RFQ |
Part Details for TK2K2A60F
TK2K2A60F CAD Models
TK2K2A60F Part Data Attributes
|
|
TK2K2A60F
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TK2K2A60F
Toshiba America Electronic Components
Power Field-Effect Transistor
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Date Of Intro | 2018-06-19 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 78 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 2.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.6 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |