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Transistors / Power Field-Effect Transistors / TK20A60W,S5VX(M
Datasheets
TK20A60W,S5VX(M by: Toshiba America Electronic Components

Power Field-Effect Transistor, 20A I(D), 600V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for TK20A60W,S5VX(M by Toshiba America Electronic Components

Results Overview of TK20A60W,S5VX(M by Toshiba America Electronic Components

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TK20A60W,S5VX(M Information

TK20A60W,S5VX(M by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
5962-9762201QEA Texas Instruments Quad LVDS Receiver 16-CDIP -55 to 125
SN65LV1023ARHBR Texas Instruments 10:1 LVDS Serdes Transmitter 100 - 660Mbps 32-VQFN -40 to 85
SN65LV1224BDBR Texas Instruments 1:10 LVDS Serdes Receiver 100 - 660Mbps 28-SSOP -40 to 85

Price & Stock for TK20A60W,S5VX(M

Part # Distributor Description Stock Price Buy
DISTI # 4173038
Farnell MOSFET, N-CH, 600V, 20A, TO-220SIS RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Each 4
  • 1 $3.5988
  • 10 $2.1619
  • 100 $1.7088
  • 500 $1.5923
  • 1,000 $1.4758
$1.4758 / $3.5988 Buy Now
Quest Components   320
  • 1 $3.3480
  • 32 $2.2320
  • 113 $2.0646
$2.0646 / $3.3480 Buy Now
DISTI # TK20A60W
TME Transistor: N-MOSFET, unipolar, 600V, 20A, 45W, TO220FP Min Qty: 1 124
  • 1 $3.1300
  • 3 $2.8100
  • 10 $2.4800
  • 50 $2.2400
  • 250 $2.0800
$2.0800 / $3.1300 Buy Now
DISTI # TK20A60W,S5VX(M
Avnet Asia Trans MOSFET N-CH 600V 20A 3-Pin TO-220SIS (Alt: TK20A60W,S5VX(M) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # TK20A60W,S5VX(M
EBV Elektronik Trans MOSFET NCH 600V 20A 3Pin TO220SIS (Alt: TK20A60W,S5VX(M) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for TK20A60W,S5VX(M

TK20A60W,S5VX(M CAD Models

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TK20A60W,S5VX(M Part Data Attributes

Parametric Data
TK20A60W,S5VX(M Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
TK20A60W,S5VX(M Toshiba America Electronic Components Power Field-Effect Transistor, 20A I(D), 600V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SC-67, TO-220SIS, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 300 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.155 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 7 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

TK20A60W,S5VX(M Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the TK20A60W,S5VX is -40°C to 150°C.

  • Proper cooling can be achieved by providing a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.

  • The recommended gate resistor value for the TK20A60W,S5VX is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.

  • Yes, the TK20A60W,S5VX is designed for high-reliability applications and meets the requirements of AEC-Q101, a standard for automotive-grade discrete semiconductors.

  • To protect the device from ESD, handle the device by the body or use an ESD wrist strap, and ensure that the device is stored in an anti-static bag or container.