Datasheets
TK20A60W,S5VX(M by:

Power Field-Effect Transistor, 20A I(D), 600V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for TK20A60W,S5VX(M by Toshiba America Electronic Components

Overview of TK20A60W,S5VX(M by Toshiba America Electronic Components

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Price & Stock for TK20A60W,S5VX(M

Part # Distributor Description Stock Price Buy
DISTI # 72AK4469
Newark Mosfet, N-Ch, 600V, 20A, To-220Sis, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:20A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Toshiba TK20A60W, S5VX(M RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 19
  • 1 $2.9300
  • 10 $2.5400
  • 25 $2.2300
  • 50 $2.0800
  • 100 $1.8100
  • 250 $1.5200
  • 500 $1.4700
$1.4700 / $2.9300 Buy Now
DISTI # 83692811
Verical Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220SIS RoHS: Compliant Min Qty: 15 Package Multiple: 1 Date Code: 2426 Americas - 20
  • 15 $2.1875
$2.1875 Buy Now
DISTI # TK20A60W
TME Transistor: N-MOSFET, unipolar, 600V, 20A, 45W, TO220FP Min Qty: 1 145
  • 1 $3.2800
  • 3 $2.9500
  • 10 $2.6000
  • 50 $2.3400
  • 250 $2.1800
$2.1800 / $3.2800 Buy Now
DISTI # TK20A60W,S5VX(M
Avnet Asia Trans MOSFET N-CH 600V 20A 3-Pin TO-220SIS (Alt: TK20A60W,S5VX(M) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # C1S751200964684
Chip1Stop Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220SIS RoHS: Compliant Container: Tube 20
  • 1 $2.8400
  • 10 $1.8100
$1.8100 / $2.8400 Buy Now
CHIPMALL.COM LIMITED   817
  • 1 $1.0283
$1.0283 Buy Now
DISTI # TK20A60W,S5VX(M
EBV Elektronik Trans MOSFET N-CH 600V 20A 3-Pin TO-220SIS (Alt: TK20A60W,S5VX(M) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for TK20A60W,S5VX(M

TK20A60W,S5VX(M CAD Models

TK20A60W,S5VX(M Part Data Attributes

TK20A60W,S5VX(M Toshiba America Electronic Components
Buy Now Datasheet
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TK20A60W,S5VX(M Toshiba America Electronic Components Power Field-Effect Transistor, 20A I(D), 600V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SC-67, TO-220SIS, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 300 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.155 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 7 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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