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Power Field-Effect Transistor, 20A I(D), 600V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
72AK4469
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Newark | Mosfet, N-Ch, 600V, 20A, To-220Sis, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:20A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Toshiba TK20A60W, S5VX(M RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 19 |
|
$1.4700 / $2.9300 | Buy Now |
DISTI #
83692811
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Verical | Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220SIS RoHS: Compliant Min Qty: 15 Package Multiple: 1 Date Code: 2426 | Americas - 20 |
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$2.1875 | Buy Now |
DISTI #
TK20A60W
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TME | Transistor: N-MOSFET, unipolar, 600V, 20A, 45W, TO220FP Min Qty: 1 | 145 |
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$2.1800 / $3.2800 | Buy Now |
DISTI #
TK20A60W,S5VX(M
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Avnet Asia | Trans MOSFET N-CH 600V 20A 3-Pin TO-220SIS (Alt: TK20A60W,S5VX(M) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
C1S751200964684
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Chip1Stop | Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220SIS RoHS: Compliant Container: Tube | 20 |
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$1.8100 / $2.8400 | Buy Now |
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CHIPMALL.COM LIMITED | 817 |
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$1.0283 | Buy Now | |
DISTI #
TK20A60W,S5VX(M
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EBV Elektronik | Trans MOSFET N-CH 600V 20A 3-Pin TO-220SIS (Alt: TK20A60W,S5VX(M) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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TK20A60W,S5VX(M
Toshiba America Electronic Components
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Datasheet
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TK20A60W,S5VX(M
Toshiba America Electronic Components
Power Field-Effect Transistor, 20A I(D), 600V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SC-67, TO-220SIS, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.155 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 7 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |