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Number of Functional Equivalents: (
4 options
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Part Data Attributes (
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Reference Designs: (
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Part Symbol
Footprint
3D Model
Avalanche Energy Rating (Eas)
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max
METAL-OXIDE SEMICONDUCTOR
Operating Temperature-Max
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Transistor Element Material
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Toshiba America Electronic Components
TRANSISTOR 19 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
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SIHF18N50D-E3 - Vishay Intertechnologies
R5019ANX - ROHM Semiconductor
APT5026HVR - Advanced Power Technology
STP20NM50FP - STMicroelectronics
This table gives cross-reference parts and alternative options found for TK19A45D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK19A45D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number
Description
Manufacturer
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SIHF18N50D-E3
Power Field-Effect Transistor, 18A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnologies
TK19A45D vs SIHF18N50D-E3
R5019ANX
Power Field-Effect Transistor, 19A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
ROHM Semiconductor
TK19A45D vs R5019ANX
APT5026HVR
Power Field-Effect Transistor, 18.5A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN
Advanced Power Technology
TK19A45D vs APT5026HVR
STP20NM50FP
N-channel 500 V, 0.20 Ohm typ., 20 A MDmesh(TM) Power MOSFET
STMicroelectronics
TK19A45D vs STP20NM50FP