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Part Details for TK16A60W,S4VX by Toshiba America Electronic Components
Overview of TK16A60W,S4VX by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for TK16A60W,S4VX
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
TK16A60WS4VX-ND
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DigiKey | MOSFET N-CH 600V 15.8A TO220SIS Min Qty: 1 Lead time: 32 Weeks Container: Tube |
28 In Stock |
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$1.1975 / $3.5400 | Buy Now |
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DISTI #
TK16A60W,S4VX
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Avnet Americas | Trans MOSFET N 600V 15.8A 3-Pin TO-220SIS Tube - Rail/Tube (Alt: TK16A60W,S4VX) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 32 Weeks, 0 Days Container: Tube | 0 |
|
$1.2933 / $1.4657 | Buy Now |
|
DISTI #
757-TK16A60WS4VX
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Mouser Electronics | MOSFETs N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC RoHS: Compliant | 203 |
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$1.1900 / $2.9400 | Buy Now |
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CHIPMALL.COM LIMITED | 600V 15.8A 190m@7.9A,10V 40W 3.7V@790uA 1 N-Channel TO-220SIS MOSFETs ROHS | 1077 |
|
$0.6469 / $1.1308 | Buy Now |
Part Details for TK16A60W,S4VX
TK16A60W,S4VX CAD Models
TK16A60W,S4VX Part Data Attributes
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TK16A60W,S4VX
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK16A60W,S4VX
Toshiba America Electronic Components
Power MOSFET - Nch 500V<VDSS≤700V
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 231 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 15.8 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 63.2 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |