Part Details for TK12X53D by Toshiba America Electronic Components
Overview of TK12X53D by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for TK12X53D
TK12X53D CAD Models
TK12X53D Part Data Attributes
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TK12X53D
Toshiba America Electronic Components
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Datasheet
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TK12X53D
Toshiba America Electronic Components
TRANSISTOR 12 A, 525 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-9F1C, SC-97, 4 PIN, FET General Purpose Power
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| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SC-97 | |
| Package Description | SMALL OUTLINE, S-PDSO-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 378 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 525 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.58 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK12X53D
This table gives cross-reference parts and alternative options found for TK12X53D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK12X53D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK3512-01SJ | Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | TK12X53D vs 2SK3512-01SJ |
| IRH7450SESCS | Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | TK12X53D vs IRH7450SESCS |
| FMC12N50E | Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN | Fuji Electric Co Ltd | TK12X53D vs FMC12N50E |
| 2SK4183 | Power Field-Effect Transistor, 13A I(D), 525V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN | SANYO Electric Co Ltd | TK12X53D vs 2SK4183 |