Datasheets
TK12P50W,RQ(S by: Toshiba America Electronic Components

Power Field-Effect Transistor, 11.5A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for TK12P50W,RQ(S by Toshiba America Electronic Components

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TK12P50W,RQ(S Information

TK12P50W,RQ(S by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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Price & Stock for TK12P50W,RQ(S

Part # Distributor Description Stock Price Buy
DISTI # 72AK4442
Newark Mosfet, N-Ch, 500V, 11.5A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continu... ous Drain Current Id:11.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Toshiba TK12P50W, RQ(S more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 974
  • 1 $2.3000
  • 10 $2.0700
  • 25 $1.9000
  • 50 $1.7300
  • 100 $1.5700
  • 250 $1.4000
  • 500 $1.3000
  • 1,000 $1.2600
$1.2600 / $2.3000 Buy Now
DISTI # TK12P50W,RQ(S
EBV Elektronik PWRMOSFET NCHANNEL (Alt: TK12P50W,RQ(S) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for TK12P50W,RQ(S

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TK12P50W,RQ(S Part Data Attributes

TK12P50W,RQ(S Toshiba America Electronic Components
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TK12P50W,RQ(S Toshiba America Electronic Components Power Field-Effect Transistor, 11.5A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description DPAK-3/2
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 167 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 11.5 A
Drain-source On Resistance-Max 0.34 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2.8 pF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 46 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON