Part Details for TK12P50W,RQ(S by Toshiba America Electronic Components
Results Overview of TK12P50W,RQ(S by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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TK12P50W,RQ(S Information
TK12P50W,RQ(S by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
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Price & Stock for TK12P50W,RQ(S
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
72AK4442
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Newark | Mosfet, N-Ch, 500V, 11.5A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continu... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 974 |
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$1.2600 / $2.3000 | Buy Now |
DISTI #
TK12P50W,RQ(S
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EBV Elektronik | PWRMOSFET NCHANNEL (Alt: TK12P50W,RQ(S) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 23 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for TK12P50W,RQ(S
TK12P50W,RQ(S CAD Models
TK12P50W,RQ(S Part Data Attributes
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TK12P50W,RQ(S
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK12P50W,RQ(S
Toshiba America Electronic Components
Power Field-Effect Transistor, 11.5A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 167 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 11.5 A | |
Drain-source On Resistance-Max | 0.34 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2.8 pF | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Pulsed Drain Current-Max (IDM) | 46 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |