Datasheets
TK12D60U by: Toshiba America Electronic Components

TRANSISTOR 12 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10V1A, 3 PIN, FET General Purpose Power

Part Details for TK12D60U by Toshiba America Electronic Components

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TK12D60U Part Data Attributes

TK12D60U Toshiba America Electronic Components
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TK12D60U Toshiba America Electronic Components TRANSISTOR 12 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10V1A, 3 PIN, FET General Purpose Power
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 69 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 144 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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