Datasheets
TK100E08N1 by:
Toshiba America Electronic Components
Hongxing Electrical Ltd
Toshiba America Electronic Components
Toshiba Corporation
Not Found

Nch 60V<VDSS≤150V

Part Details for TK100E08N1 by Toshiba America Electronic Components

Results Overview of TK100E08N1 by Toshiba America Electronic Components

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

TK100E08N1 Information

TK100E08N1 by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for TK100E08N1

Part # Distributor Description Stock Price Buy
Quest Components   40
  • 1 $6.0000
  • 3 $4.0000
  • 7 $3.0000
$3.0000 / $6.0000 Buy Now

Part Details for TK100E08N1

TK100E08N1 CAD Models

TK100E08N1 Part Data Attributes

TK100E08N1 Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
TK100E08N1 Toshiba America Electronic Components Nch 60V<VDSS≤150V
Select a part to compare:
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description TO-220, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 278 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 255 W
Pulsed Drain Current-Max (IDM) 568 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TK100E08N1

This table gives cross-reference parts and alternative options found for TK100E08N1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK100E08N1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB031NE7N3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 100A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 TK100E08N1 vs IPB031NE7N3G

TK100E08N1 Related Parts

TK100E08N1 Frequently Asked Questions (FAQ)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the copper area should be connected to a ground plane to reduce thermal resistance.

  • To ensure reliable operation in high-temperature environments, it is recommended to derate the power dissipation of the TK100E08N1 according to the temperature derating curve provided in the datasheet. Additionally, ensure good thermal design and heat sinking to keep the junction temperature below the maximum rating.

  • The maximum allowable voltage for the input pins of the TK100E08N1 is 5.5V, which is the absolute maximum rating. However, it is recommended to keep the input voltage within the recommended operating range of 3.3V to 5V to ensure reliable operation.

  • Yes, the TK100E08N1 can be used in a switching regulator application. However, it is essential to ensure that the switching frequency is within the recommended range of 100 kHz to 500 kHz, and the input voltage is within the recommended operating range.

  • Toshiba recommends using a TVS (Transient Voltage Suppressor) diode or a Zener diode with a voltage rating of 5.5V or higher to protect the TK100E08N1 from ESD (Electrostatic Discharge) damage.