Datasheets
TK100A08N1 by: Toshiba America Electronic Components

Nch 60V<VDSS≤150V

Part Details for TK100A08N1 by Toshiba America Electronic Components

Overview of TK100A08N1 by Toshiba America Electronic Components

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Applications Industrial Automation Electronic Manufacturing

Part Details for TK100A08N1

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TK100A08N1 Part Data Attributes:

TK100A08N1 Toshiba America Electronic Components
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TK100A08N1 Toshiba America Electronic Components Nch 60V<VDSS≤150V
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 278 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 568 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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