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Transistors / Power Field-Effect Transistors / TJ30S06M3L
Datasheets
TJ30S06M3L by: Toshiba America Electronic Components

TRANSISTOR POWER, FET, FET General Purpose Power

Part Details for TJ30S06M3L by Toshiba America Electronic Components

Overview of TJ30S06M3L by Toshiba America Electronic Components

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Applications Automotive

Price & Stock for TJ30S06M3L

Part # Distributor Description Stock Price Buy
DISTI # TJ30S06M3L,LXHQ
Avnet Americas Transistor MOSFET P-Channel 60V 30A 3-Pin DPAK - Tape and Reel (Alt: TJ30S06M3L,LXHQ) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
RFQ
Win Source Electronics MOSFET P-CH 60V 30A DPAK-3 7873
  • 4 $12.7180
  • 10 $10.4350
  • 15 $10.1090
  • 21 $9.7830
  • 27 $9.4570
  • 36 $8.4790
$8.4790 / $12.7180 Buy Now

Part Details for TJ30S06M3L

TJ30S06M3L CAD Models

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TJ30S06M3L Part Data Attributes

Parametric Data
TJ30S06M3L Toshiba America Electronic Components
Buy Now Datasheet
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TJ30S06M3L Toshiba America Electronic Components TRANSISTOR POWER, FET, FET General Purpose Power
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 71 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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