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Part Details for TJ10S04M3L by Toshiba America Electronic Components
Overview of TJ10S04M3L by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
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Energy and Power Systems
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Renewable Energy
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Price & Stock for TJ10S04M3L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TJ10S04M3L,LXHQ
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Avnet Americas | Transistor MOSFET P-Channel 40V 10A 3-Pin DPAK - Tape and Reel (Alt: TJ10S04M3L,LXHQ) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0 |
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RFQ |
Part Details for TJ10S04M3L
TJ10S04M3L CAD Models
TJ10S04M3L Part Data Attributes
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TJ10S04M3L
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TJ10S04M3L
Toshiba America Electronic Components
TRANSISTOR POWER, FET, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 23 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.062 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 90 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 27 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TJ10S04M3L
This table gives cross-reference parts and alternative options found for TJ10S04M3L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TJ10S04M3L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TJ10S04M3L,LXHQ | Power Field-Effect Transistor, 10A I(D), 40V, 0.062ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Toshiba America Electronic Components | TJ10S04M3L vs TJ10S04M3L,LXHQ |