Datasheets
TIP127 by:

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Details for TIP127 by Motorola Semiconductor Products

Overview of TIP127 by Motorola Semiconductor Products

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Price & Stock for TIP127

Part # Distributor Description Stock Price Buy
Bristol Electronics   43
RFQ
Bristol Electronics   88
RFQ
Quest Components Bipolar Junction Transistor, Darlington, PNP Type, TO-220AB 4
  • 1 $0.9030
$0.9030 Buy Now
Quest Components Bipolar Junction Transistor, Darlington, PNP Type, TO-220AB 107
  • 1 $1.2500
  • 21 $0.7500
  • 81 $0.6250
$0.6250 / $1.2500 Buy Now
Quest Components Bipolar Junction Transistor, Darlington, PNP Type, TO-220AB 31
  • 1 $1.2500
  • 5 $1.0000
  • 21 $0.6250
$0.6250 / $1.2500 Buy Now
Quest Components Bipolar Junction Transistor, Darlington, PNP Type, TO-220AB 34
  • 1 $1.4000
  • 5 $1.1200
  • 19 $0.8400
$0.8400 / $1.4000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 223
  • 1 $1.1500
  • 100 $0.8700
  • 1,000 $0.7500
$0.7500 / $1.1500 Buy Now
South Electronics TIP127 2100
RFQ

Part Details for TIP127

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TIP127 Part Data Attributes:

TIP127 Motorola Semiconductor Products
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TIP127 Motorola Semiconductor Products Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection COLLECTOR
Collector Current-Max (IC) 5 A
Collector-Base Capacitance-Max 300 pF
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 1000
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 65 W
Power Dissipation-Max (Abs) 65 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz
VCEsat-Max 4 V

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