Part Details for TIP110 by Central Semiconductor Corp
Overview of TIP110 by Central Semiconductor Corp
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TIP110
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, TO-220AB | 1 |
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$0.8400 | Buy Now |
Part Details for TIP110
TIP110 CAD Models
TIP110 Part Data Attributes
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TIP110
Central Semiconductor Corp
Buy Now
Datasheet
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TIP110
Central Semiconductor Corp
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Central Semiconductor | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 2 A | |
Collector-Base Capacitance-Max | 100 pF | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | DARLINGTON | |
DC Current Gain-Min (hFE) | 500 | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 50 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 25 MHz | |
VCEsat-Max | 2.5 V |