Part Details for TIM8596-15 by Toshiba America Electronic Components
Overview of TIM8596-15 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Electronic Manufacturing
Entertainment and Gaming
Price & Stock for TIM8596-15
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TIM8596-15
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EBV Elektronik | MICROWAVE POWER GaAs FET 15V 11.5A 3-Pin 2-11C1B (Alt: TIM8596-15) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Part Details for TIM8596-15
TIM8596-15 CAD Models
TIM8596-15 Part Data Attributes
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TIM8596-15
Toshiba America Electronic Components
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Datasheet
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TIM8596-15
Toshiba America Electronic Components
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | HERMETIC SEALED, 2-11C1B, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Samacsys Manufacturer | Toshiba | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 15 V | |
| Drain Current-Max (ID) | 11.5 A | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | X BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 60 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |