Datasheets
TIM5964-35SLA by: Toshiba America Electronic Components

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED PACKAGE-2, FET RF Power

Part Details for TIM5964-35SLA by Toshiba America Electronic Components

Results Overview of TIM5964-35SLA by Toshiba America Electronic Components

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Telecommunications Automotive

TIM5964-35SLA Information

TIM5964-35SLA by Toshiba America Electronic Components is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for TIM5964-35SLA

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TIM5964-35SLA Part Data Attributes

TIM5964-35SLA Toshiba America Electronic Components
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TIM5964-35SLA Toshiba America Electronic Components TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED PACKAGE-2, FET RF Power
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description HERMETIC SEALED PACKAGE-2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 26 A
FET Technology JUNCTION
Highest Frequency Band C BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 115 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for TIM5964-35SLA

This table gives cross-reference parts and alternative options found for TIM5964-35SLA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TIM5964-35SLA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
TIM5964-60SL Toshiba America Electronic Components Check for Price TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power TIM5964-35SLA vs TIM5964-60SL
TIM5964-16SL Toshiba America Electronic Components Check for Price TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power TIM5964-35SLA vs TIM5964-16SL
TIM5964-35SLA-251 Toshiba America Electronic Components Check for Price TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power TIM5964-35SLA vs TIM5964-35SLA-251
TIM5964-16SL-081 Toshiba America Electronic Components Check for Price TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power TIM5964-35SLA vs TIM5964-16SL-081
TIM5964-16L-151 Toshiba America Electronic Components Check for Price TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power TIM5964-35SLA vs TIM5964-16L-151
TIM5964-30LA Toshiba America Electronic Components Check for Price TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power TIM5964-35SLA vs TIM5964-30LA
TIM5964-16LA Toshiba America Electronic Components Check for Price TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power TIM5964-35SLA vs TIM5964-16LA
TIM5964-35SLA-422 Toshiba America Electronic Components Check for Price TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power TIM5964-35SLA vs TIM5964-35SLA-422
TIM5964-80SL Toshiba America Electronic Components Check for Price TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA02C, 2 PIN, FET RF Power TIM5964-35SLA vs TIM5964-80SL
TIM5964-14L Toshiba America Electronic Components Check for Price TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power TIM5964-35SLA vs TIM5964-14L

TIM5964-35SLA Related Parts

TIM5964-35SLA Frequently Asked Questions (FAQ)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.

  • Ensure proper heat sinking, use a thermal interface material (TIM) with a high thermal conductivity, and follow the recommended operating temperature range (up to 150°C) to ensure reliable operation.

  • The maximum allowed voltage on the input pins is 5.5V, exceeding which may cause damage to the device.

  • Yes, the TIM5964-35SLA is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize EMI and noise.

  • Use ESD protection devices such as TVS diodes or ESD arrays on the input lines, and follow proper handling and storage procedures to prevent ESD damage.