Part Details for TIM4450-25UL by Toshiba America Electronic Components
Overview of TIM4450-25UL by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
Price & Stock for TIM4450-25UL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TIM4450-25UL
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EBV Elektronik | MICROWAVE POWER GaAs RF FET 15V 20A 3-Pin (Alt: TIM4450-25UL) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Part Details for TIM4450-25UL
TIM4450-25UL CAD Models
TIM4450-25UL Part Data Attributes:
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TIM4450-25UL
Toshiba America Electronic Components
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Datasheet
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TIM4450-25UL
Toshiba America Electronic Components
TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | HERMETIC SEALED, 2-16G1B, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 15 V | |
Drain Current-Max (ID) | 20 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 100 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |