Part Details for TIM1414-18L by Toshiba America Electronic Components
Overview of TIM1414-18L by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Industrial Automation
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Telecommunications
Automotive
Robotics and Drones
Price & Stock for TIM1414-18L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TIM1414-18L
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EBV Elektronik | MICROWAVE POWER GaAs FET 15V 11.5A 3-Pin 2-11C1B (Alt: TIM1414-18L) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Part Details for TIM1414-18L
TIM1414-18L CAD Models
TIM1414-18L Part Data Attributes:
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TIM1414-18L
Toshiba America Electronic Components
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Datasheet
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Compare Parts:
TIM1414-18L
Toshiba America Electronic Components
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | HERMETIC SEALED, 2-11C1B, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Toshiba | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 15 V | |
| Drain Current-Max (ID) | 11.5 A | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 60 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for TIM1414-18L
This table gives cross-reference parts and alternative options found for TIM1414-18L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TIM1414-18L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TIM1414-30L | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 7-AA03A, 3 PIN, FET RF Power | Toshiba America Electronic Components | TIM1414-18L vs TIM1414-30L |
| TIM1414-5 | TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power | Toshiba America Electronic Components | TIM1414-18L vs TIM1414-5 |
| TIM1414-7 | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power | Toshiba America Electronic Components | TIM1414-18L vs TIM1414-7 |
| TIM1414-18L-252 | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power | Toshiba America Electronic Components | TIM1414-18L vs TIM1414-18L-252 |
| TIM1414-2 | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-9D1B, 3 PIN, FET RF Power | Toshiba America Electronic Components | TIM1414-18L vs TIM1414-2 |
| TIM1414-10L | TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power | Toshiba America Electronic Components | TIM1414-18L vs TIM1414-10L |
| TIM1414-10B | TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power | Toshiba America Electronic Components | TIM1414-18L vs TIM1414-10B |
| TIM1414-10A-252 | TRANSISTOR KU BAND, Si, N-CHANNEL, RF POWER, MOSFET, 2-11C1B, 3 PIN, FET RF Power | Toshiba America Electronic Components | TIM1414-18L vs TIM1414-10A-252 |
| TIM1414-2L | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power | Toshiba America Electronic Components | TIM1414-18L vs TIM1414-2L |
| TIM1314-4UL | RF POWER, FET | Toshiba America Electronic Components | TIM1414-18L vs TIM1314-4UL |