Part Details for TIM1011-8UL by Toshiba America Electronic Components
Overview of TIM1011-8UL by Toshiba America Electronic Components
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Applications
Education and Research
Environmental Monitoring
Internet of Things (IoT)
Industrial Automation
Computing and Data Storage
Aerospace and Defense
Healthcare
Agriculture Technology
Medical Imaging
Telecommunications
Automotive
Part Details for TIM1011-8UL
TIM1011-8UL CAD Models
TIM1011-8UL Part Data Attributes
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TIM1011-8UL
Toshiba America Electronic Components
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TIM1011-8UL
Toshiba America Electronic Components
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | HERMETIC SEALED, 2-9D1B, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 15 V | |
| Drain Current-Max (ID) | 5.7 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | X BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 40.5 W | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |