Part Details for TIM1011-8L by Toshiba America Electronic Components
Overview of TIM1011-8L by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Environmental Monitoring
Internet of Things (IoT)
Industrial Automation
Computing and Data Storage
Aerospace and Defense
Healthcare
Agriculture Technology
Medical Imaging
Telecommunications
Automotive
Part Details for TIM1011-8L
TIM1011-8L CAD Models
TIM1011-8L Part Data Attributes
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TIM1011-8L
Toshiba America Electronic Components
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Datasheet
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TIM1011-8L
Toshiba America Electronic Components
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 15 V | |
| Drain Current-Max (ID) | 10.4 A | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 60 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for TIM1011-8L
This table gives cross-reference parts and alternative options found for TIM1011-8L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TIM1011-8L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TIM1011-10L | TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power | Toshiba America Electronic Components | TIM1011-8L vs TIM1011-10L |
| TIM1011-5 | TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power | Toshiba America Electronic Components | TIM1011-8L vs TIM1011-5 |
| TIM1011-15 | TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power | Toshiba America Electronic Components | TIM1011-8L vs TIM1011-15 |
| TIM1011-2 | TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power | Toshiba America Electronic Components | TIM1011-8L vs TIM1011-2 |
| FLM1011-8C | X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | TIM1011-8L vs FLM1011-8C |
| FLM1011-8C | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Limited | TIM1011-8L vs FLM1011-8C |