Datasheets
TIM1011-8L by: Toshiba America Electronic Components

TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power

Part Details for TIM1011-8L by Toshiba America Electronic Components

Results Overview of TIM1011-8L by Toshiba America Electronic Components

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Education and Research Environmental Monitoring Internet of Things (IoT) Industrial Automation Computing and Data Storage Aerospace and Defense Healthcare Agriculture Technology Medical Imaging Telecommunications Automotive

TIM1011-8L Information

TIM1011-8L by Toshiba America Electronic Components is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for TIM1011-8L

TIM1011-8L CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

TIM1011-8L Part Data Attributes

TIM1011-8L Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
TIM1011-8L Toshiba America Electronic Components TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power
Select a part to compare:
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 10.4 A
FET Technology JUNCTION
Highest Frequency Band KU BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 60 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for TIM1011-8L

This table gives cross-reference parts and alternative options found for TIM1011-8L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TIM1011-8L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FLM1011-8C FUJITSU Semiconductor Limited Check for Price X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 TIM1011-8L vs FLM1011-8C
TIM1011-15 Toshiba America Electronic Components Check for Price TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power TIM1011-8L vs TIM1011-15
TIM1011-8 Toshiba America Electronic Components Check for Price TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power TIM1011-8L vs TIM1011-8
TIM1011-10 Toshiba America Electronic Components Check for Price TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power TIM1011-8L vs TIM1011-10