Part Details for THMY51N01B70 by Toshiba America Electronic Components
Results Overview of THMY51N01B70 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Computing and Data Storage
Renewable Energy
Robotics and Drones
THMY51N01B70 Information
THMY51N01B70 by Toshiba America Electronic Components is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for THMY51N01B70
THMY51N01B70 CAD Models
THMY51N01B70 Part Data Attributes
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THMY51N01B70
Toshiba America Electronic Components
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Datasheet
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THMY51N01B70
Toshiba America Electronic Components
IC 64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168, DIMM-168, Dynamic RAM
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM168 | |
| Pin Count | 168 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 142 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM168 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.016 A | |
| Supply Current-Max | 2.72 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for THMY51N01B70
This table gives cross-reference parts and alternative options found for THMY51N01B70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THMY51N01B70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| M366S6553BTS-C7A | Samsung Semiconductor | Check for Price | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | THMY51N01B70 vs M366S6553BTS-C7A |
| MT8LSDT6464AG-13EXX | Micron Technology Inc | Check for Price | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, MO-161, DIMM-168 | THMY51N01B70 vs MT8LSDT6464AG-13EXX |
| MT8LSDT6464AG-133XX | Micron Technology Inc | Check for Price | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, MO-161, DIMM-168 | THMY51N01B70 vs MT8LSDT6464AG-133XX |
| HYS64V64220GU-8B-A | Infineon Technologies AG | Check for Price | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | THMY51N01B70 vs HYS64V64220GU-8B-A |
| WED3DG6466V10D2 | Microsemi Corporation | Check for Price | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | THMY51N01B70 vs WED3DG6466V10D2 |
| HYM72V64656BT8-S | SK Hynix Inc | Check for Price | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | THMY51N01B70 vs HYM72V64656BT8-S |
| M366S6453BT0-C7A | Samsung Semiconductor | Check for Price | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | THMY51N01B70 vs M366S6453BT0-C7A |
| HYM72V656431LTH-8 | SK Hynix Inc | Check for Price | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | THMY51N01B70 vs HYM72V656431LTH-8 |
| M366S6453AT0-C75 | Samsung Semiconductor | Check for Price | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | THMY51N01B70 vs M366S6453AT0-C75 |
| MT16LSDT6464AY-10EXX | Micron Technology Inc | Check for Price | Synchronous DRAM Module, 64MX64, 6ns, CMOS, LEAD FREE, MO-161, DIMM-168 | THMY51N01B70 vs MT16LSDT6464AY-10EXX |