Part Details for THMY12N11C75 by Toshiba America Electronic Components
Results Overview of THMY12N11C75 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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THMY12N11C75 Information
THMY12N11C75 by Toshiba America Electronic Components is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for THMY12N11C75
THMY12N11C75 CAD Models
THMY12N11C75 Part Data Attributes
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THMY12N11C75
Toshiba America Electronic Components
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Datasheet
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THMY12N11C75
Toshiba America Electronic Components
IC 16M X 16 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168, DIMM-168, Dynamic RAM
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | DIMM | |
Package Description | DIMM, DIMM168 | |
Pin Count | 168 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH; WD-MAX | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N168 | |
Length | 133.35 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | SYNCHRONOUS DRAM MODULE | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 168 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM168 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 25.53 mm | |
Self Refresh | YES | |
Standby Current-Max | 0.004 A | |
Supply Current-Max | 0.64 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Width | 2.8 mm |
Alternate Parts for THMY12N11C75
This table gives cross-reference parts and alternative options found for THMY12N11C75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THMY12N11C75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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THMY12E11C70 | Toshiba America Electronic Components | Check for Price | IC 16M X 16 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168, DIMM-168, Dynamic RAM | THMY12N11C75 vs THMY12E11C70 |
THMY12N11C80 | Toshiba America Electronic Components | Check for Price | IC 16M X 16 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM | THMY12N11C75 vs THMY12N11C80 |
THMY12E11C80 | Toshiba America Electronic Components | Check for Price | IC 16M X 16 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM | THMY12N11C75 vs THMY12E11C80 |