Part Details for THLY12N11B75L by Toshiba America Electronic Components
Results Overview of THLY12N11B75L by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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THLY12N11B75L Information
THLY12N11B75L by Toshiba America Electronic Components is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for THLY12N11B75L
THLY12N11B75L CAD Models
THLY12N11B75L Part Data Attributes
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THLY12N11B75L
Toshiba America Electronic Components
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Datasheet
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THLY12N11B75L
Toshiba America Electronic Components
IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | MODULE | |
Package Description | DIMM, DIMM144,32 | |
Pin Count | 144 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Mode | SINGLE BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N144 | |
Memory Density | 1073741824 bit | |
Memory IC Type | SYNCHRONOUS DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 144 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX64 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM144,32 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Self Refresh | YES | |
Standby Current-Max | 0.004 A | |
Supply Current-Max | 0.64 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL |
Alternate Parts for THLY12N11B75L
This table gives cross-reference parts and alternative options found for THLY12N11B75L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THLY12N11B75L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MH16S64FFB-10L | Mitsubishi Electric | Check for Price | Synchronous DRAM Module, 16MX64, 8ns, CMOS, DIMM-144 | THLY12N11B75L vs MH16S64FFB-10L |
MT8LSDT1664HIG-133XX | Micron Technology Inc | Check for Price | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | THLY12N11B75L vs MT8LSDT1664HIG-133XX |
M464S1654DTS-L7C | Samsung Semiconductor | Check for Price | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | THLY12N11B75L vs M464S1654DTS-L7C |
M464S1654DTS-L7A | Samsung Semiconductor | Check for Price | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | THLY12N11B75L vs M464S1654DTS-L7A |
MC-4516CB64ES-A10B | NEC Electronics Group | Check for Price | Synchronous DRAM Module, 16MX64, 7ns, MOS, SODIMM-144 | THLY12N11B75L vs MC-4516CB64ES-A10B |
M464S1654CTS-L1H | Samsung Semiconductor | Check for Price | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | THLY12N11B75L vs M464S1654CTS-L1H |
MT4LSDT1664LHY-133XX | Micron Technology Inc | Check for Price | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, LEAD FREE, SODIMM-144 | THLY12N11B75L vs MT4LSDT1664LHY-133XX |
V436516Z04VTG-10PC | Mosel Vitelic Corporation | Check for Price | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | THLY12N11B75L vs V436516Z04VTG-10PC |
HYM72V16M656T6-P | SK Hynix Inc | Check for Price | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | THLY12N11B75L vs HYM72V16M656T6-P |
MT8LSDT1664HG-13EB1 | Micron Technology Inc | Check for Price | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | THLY12N11B75L vs MT8LSDT1664HG-13EB1 |