Datasheets
THLY12N11B75L by: Toshiba America Electronic Components

IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM

Part Details for THLY12N11B75L by Toshiba America Electronic Components

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THLY12N11B75L Information

THLY12N11B75L by Toshiba America Electronic Components is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Part Details for THLY12N11B75L

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THLY12N11B75L Part Data Attributes

THLY12N11B75L Toshiba America Electronic Components
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THLY12N11B75L Toshiba America Electronic Components IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM
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Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Part Package Code MODULE
Package Description DIMM, DIMM144,32
Pin Count 144
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode SINGLE BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N144
Memory Density 1073741824 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM144,32
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Standby Current-Max 0.004 A
Supply Current-Max 0.64 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 0.8 mm
Terminal Position DUAL

Alternate Parts for THLY12N11B75L

This table gives cross-reference parts and alternative options found for THLY12N11B75L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THLY12N11B75L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MH16S64FFB-10L Mitsubishi Electric Check for Price Synchronous DRAM Module, 16MX64, 8ns, CMOS, DIMM-144 THLY12N11B75L vs MH16S64FFB-10L
MT8LSDT1664HIG-133XX Micron Technology Inc Check for Price Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 THLY12N11B75L vs MT8LSDT1664HIG-133XX
M464S1654DTS-L7C Samsung Semiconductor Check for Price Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 THLY12N11B75L vs M464S1654DTS-L7C
M464S1654DTS-L7A Samsung Semiconductor Check for Price Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 THLY12N11B75L vs M464S1654DTS-L7A
MC-4516CB64ES-A10B NEC Electronics Group Check for Price Synchronous DRAM Module, 16MX64, 7ns, MOS, SODIMM-144 THLY12N11B75L vs MC-4516CB64ES-A10B
M464S1654CTS-L1H Samsung Semiconductor Check for Price Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 THLY12N11B75L vs M464S1654CTS-L1H
MT4LSDT1664LHY-133XX Micron Technology Inc Check for Price Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, LEAD FREE, SODIMM-144 THLY12N11B75L vs MT4LSDT1664LHY-133XX
V436516Z04VTG-10PC Mosel Vitelic Corporation Check for Price Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 THLY12N11B75L vs V436516Z04VTG-10PC
HYM72V16M656T6-P SK Hynix Inc Check for Price Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 THLY12N11B75L vs HYM72V16M656T6-P
MT8LSDT1664HG-13EB1 Micron Technology Inc Check for Price Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 THLY12N11B75L vs MT8LSDT1664HG-13EB1