Datasheets
TGF4112 by:

RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, 0.033 X 0.071 INCH, 0.004 INCH HEIGHT, DIE-9

Part Details for TGF4112 by TriQuint Semiconductor

Overview of TGF4112 by TriQuint Semiconductor

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Applications Industrial Automation Renewable Energy Robotics and Drones

Part Details for TGF4112

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TGF4112 Part Data Attributes:

TGF4112 TriQuint Semiconductor
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TGF4112 TriQuint Semiconductor RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, 0.033 X 0.071 INCH, 0.004 INCH HEIGHT, DIE-9
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TRIQUINT SEMICONDUCTOR INC
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N9
Pin Count 9
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 12 V
FET Technology HETERO-JUNCTION
Highest Frequency Band S BAND
JESD-30 Code R-XUUC-N9
Number of Elements 1
Number of Terminals 9
Operating Mode DEPLETION MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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