Datasheets
TDB6HK180N16RRB11BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for TDB6HK180N16RRB11BOSA1 by Infineon Technologies AG

Overview of TDB6HK180N16RRB11BOSA1 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Price & Stock for TDB6HK180N16RRB11BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 49AC0812
Newark Igbt Mod, 1.2Kv, 140A, 515W, Continuous Collector Current:140A, Collector Emitter Saturation Voltage:1.75V, Power Dissipation:515W, Operating Temperature Max:150°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon TDB6HK180N16RRB11BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # TDB6HK180N16RRB11B
Avnet Americas LOW POWER ECONO - Trays (Alt: TDB6HK180N16RRB11B) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Container: Tray 0
RFQ

Part Details for TDB6HK180N16RRB11BOSA1

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TDB6HK180N16RRB11BOSA1 Part Data Attributes

TDB6HK180N16RRB11BOSA1 Infineon Technologies AG
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Compare Parts:
TDB6HK180N16RRB11BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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