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Memory DRAMs TC59LM818DMB-33

Memory
TC59LM818DMB-33
Toshiba America Electronic Components
Description: IC 16M X 18 DDR DRAM, 0.5 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM

Overview of TC59LM818DMB-33 by Toshiba America Electronic Components

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for TC59LM818DMB-33 by Toshiba America Electronic Components

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   750
RFQ
Bristol Electronics   37
RFQ
Quest Components 16M X 18 DDR DRAM, 0.5 NS, PBGA60 600
  • 1 $38.0000
  • 165 $29.4500
  • 341 $28.5000
$28.5000 / $38.0000 Buy Now
Quest Components 16M X 18 DDR DRAM, 0.5 NS, PBGA60 44
  • 1 $24.7000
  • 21 $23.7500
  • 43 $22.8000
$22.8000 / $24.7000 Buy Now
Quest Components 16M X 18 DDR DRAM, 0.5 NS, PBGA60 35
  • 1 $186.0250
  • 17 $170.0800
  • 26 $159.4500
$159.4500 / $186.0250 Buy Now
Quest Components 16M X 18 DDR DRAM, 0.5 NS, PBGA60 17
  • 1 $38.0000
  • 8 $36.1000
  • 15 $34.2000
$34.2000 / $38.0000 Buy Now

CAD Models for TC59LM818DMB-33 by Toshiba America Electronic Components
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Part Data Attributes for TC59LM818DMB-33 by Toshiba America Electronic Components
Parametric Data

TC59LM818DMB-33
Toshiba America Electronic Components
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TOSHIBA CORP
Part Package Code
BGA
Package Description
TBGA,
Pin Count
60
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.5 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B60
JESD-609 Code
e0
Length
16.5 mm
Memory Density
301989888 bit
Memory IC Type
DDR DRAM
Memory Width
18
Number of Functions
1
Number of Ports
1
Number of Terminals
60
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
Organization
16MX18
Package Body Material
PLASTIC/EPOXY
Package Code
TBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
2.625 V
Supply Voltage-Min (Vsup)
2.375 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
MOS
Temperature Grade
OTHER
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
Width
9 mm
Want to compare parts?
  1. TC59LM818DMB-33
    Toshiba America Electronic Components
    IC 16M X 18 DDR DRAM, 0.5 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM
    VS

Alternate Parts for TC59LM818DMB-33

This table gives cross-reference parts and alternative options found for TC59LM818DMB-33. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TC59LM818DMB-33, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
TC59LM818DMG-30 IC 16M X 18 DDR DRAM, 0.5 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-60, Dynamic RAM Toshiba America Electronic Components TC59LM818DMB-33 vs TC59LM818DMG-30
Part Number Description Manufacturer Compare
K4C89183AF-ACFB0 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor TC59LM818DMB-33 vs K4C89183AF-ACFB0
K4C89183AF-GCF6 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor TC59LM818DMB-33 vs K4C89183AF-GCF6
K4C89183AF-ACF60 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor TC59LM818DMB-33 vs K4C89183AF-ACF60
K4C89183AF-GCG70 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor TC59LM818DMB-33 vs K4C89183AF-GCG70
K4C89183AF-GCF50 DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 X 1 MM PITCH, FBGA-60 Samsung Semiconductor TC59LM818DMB-33 vs K4C89183AF-GCF50
TC59LM818DMGI-37 IC 16M X 18 DDR DRAM, 0.65 ns, PBGA60, 9 X 17 MM, 1.00 MM PITCH, LEAD FREE, PLASTIC, TFBGA-60, Dynamic RAM Toshiba America Electronic Components TC59LM818DMB-33 vs TC59LM818DMGI-37
K4C89183AF-GCF5 DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor TC59LM818DMB-33 vs K4C89183AF-GCF5
TC59LM818DMB-40 IC 16M X 18 DDR DRAM, 0.65 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM Toshiba America Electronic Components TC59LM818DMB-33 vs TC59LM818DMB-40
TC59LM818DMBI-37 IC 16M X 18 DDR DRAM, 0.65 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM Toshiba America Electronic Components TC59LM818DMB-33 vs TC59LM818DMBI-37
K4C89183AF-GCFB DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor TC59LM818DMB-33 vs K4C89183AF-GCFB

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