Part Details for TC59LM818DMB-33 by Toshiba America Electronic Components
Overview of TC59LM818DMB-33 by Toshiba America Electronic Components
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TC59LM818DMB-33
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 750 |
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Bristol Electronics | 37 |
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RFQ | ||
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Quest Components | 16M X 18 DDR DRAM, 0.5 NS, PBGA60 | 600 |
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$28.5000 / $38.0000 | Buy Now |
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Quest Components | 16M X 18 DDR DRAM, 0.5 NS, PBGA60 | 44 |
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$22.8000 / $24.7000 | Buy Now |
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Quest Components | 16M X 18 DDR DRAM, 0.5 NS, PBGA60 | 35 |
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$159.4500 / $186.0250 | Buy Now |
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Quest Components | 16M X 18 DDR DRAM, 0.5 NS, PBGA60 | 17 |
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$34.2000 / $38.0000 | Buy Now |
Part Details for TC59LM818DMB-33
TC59LM818DMB-33 CAD Models
TC59LM818DMB-33 Part Data Attributes
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TC59LM818DMB-33
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TC59LM818DMB-33
Toshiba America Electronic Components
IC 16M X 18 DDR DRAM, 0.5 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | BGA | |
| Package Description | TBGA, | |
| Pin Count | 60 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e0 | |
| Length | 16.5 mm | |
| Memory Density | 301989888 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 18 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX18 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.625 V | |
| Supply Voltage-Min (Vsup) | 2.375 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | MOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 9 mm |
Alternate Parts for TC59LM818DMB-33
This table gives cross-reference parts and alternative options found for TC59LM818DMB-33. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TC59LM818DMB-33, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4C89183AF-GCFB | DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 | Samsung Semiconductor | TC59LM818DMB-33 vs K4C89183AF-GCFB |
| K4C89183AF-ACFB0 | DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 | Samsung Semiconductor | TC59LM818DMB-33 vs K4C89183AF-ACFB0 |
| K4C89183AF-AIF50 | DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 | Samsung Semiconductor | TC59LM818DMB-33 vs K4C89183AF-AIF50 |
| K4C89183AF-GCF5 | DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 | Samsung Semiconductor | TC59LM818DMB-33 vs K4C89183AF-GCF5 |
| K4C89183AF-GCF60 | DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 X 1 MM PITCH, FBGA-60 | Samsung Semiconductor | TC59LM818DMB-33 vs K4C89183AF-GCF60 |
| TC59LM818DMG-33 | IC 16M X 18 DDR DRAM, 0.5 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-60, Dynamic RAM | Toshiba America Electronic Components | TC59LM818DMB-33 vs TC59LM818DMG-33 |
| K4C89183AF-GCFB0 | DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 X 1 MM PITCH, FBGA-60 | Samsung Semiconductor | TC59LM818DMB-33 vs K4C89183AF-GCFB0 |
| K4C89183AF-ACF50 | DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 | Samsung Semiconductor | TC59LM818DMB-33 vs K4C89183AF-ACF50 |