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Memory / DRAMs / TC59LM818DMB-33
Datasheets
TC59LM818DMB-33 by: Toshiba America Electronic Components

IC 16M X 18 DDR DRAM, 0.5 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM

Part Details for TC59LM818DMB-33 by Toshiba America Electronic Components

Results Overview of TC59LM818DMB-33 by Toshiba America Electronic Components

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

TC59LM818DMB-33 Information

TC59LM818DMB-33 by Toshiba America Electronic Components is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for TC59LM818DMB-33

Part # Distributor Description Stock Price Buy
Bristol Electronics   750
RFQ
Bristol Electronics   37
RFQ
Quest Components 16M X 18 DDR DRAM, 0.5 NS, PBGA60 600
  • 1 $38.0000
  • 165 $29.4500
  • 341 $28.5000
$28.5000 / $38.0000 Buy Now
Quest Components 16M X 18 DDR DRAM, 0.5 NS, PBGA60 44
  • 1 $24.7000
  • 21 $23.7500
  • 43 $22.8000
$22.8000 / $24.7000 Buy Now
Quest Components 16M X 18 DDR DRAM, 0.5 NS, PBGA60 35
  • 1 $185.5000
  • 17 $169.6000
  • 26 $159.0000
$159.0000 / $185.5000 Buy Now
Quest Components 16M X 18 DDR DRAM, 0.5 NS, PBGA60 17
  • 1 $38.0000
  • 8 $36.1000
  • 15 $34.2000
$34.2000 / $38.0000 Buy Now

Part Details for TC59LM818DMB-33

TC59LM818DMB-33 CAD Models

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TC59LM818DMB-33 Part Data Attributes

Parametric Data
TC59LM818DMB-33 Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
TC59LM818DMB-33 Toshiba America Electronic Components IC 16M X 18 DDR DRAM, 0.5 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM
Select a part to compare:
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Part Package Code BGA
Package Description 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60
Pin Count 60
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.5 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60
JESD-609 Code e0
Length 16.5 mm
Memory Density 301989888 bit
Memory IC Type DDR DRAM
Memory Width 18
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 16MX18
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.625 V
Supply Voltage-Min (Vsup) 2.375 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology MOS
Temperature Grade OTHER
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 9 mm

Alternate Parts for TC59LM818DMB-33

This table gives cross-reference parts and alternative options found for TC59LM818DMB-33. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TC59LM818DMB-33, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
K4C89183AF-GCF6 Samsung Semiconductor Check for Price DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 TC59LM818DMB-33 vs K4C89183AF-GCF6
K4C89183AF-GCFB Samsung Semiconductor Check for Price DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 TC59LM818DMB-33 vs K4C89183AF-GCFB
K4C89183AF-GIF50 Samsung Semiconductor Check for Price DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 X 1 MM PITCH, FBGA-60 TC59LM818DMB-33 vs K4C89183AF-GIF50
K4C89183AF-GIFB0 Samsung Semiconductor Check for Price DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 TC59LM818DMB-33 vs K4C89183AF-GIFB0
TC59LM818DMB-40 Toshiba America Electronic Components Check for Price IC 16M X 18 DDR DRAM, 0.65 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM TC59LM818DMB-33 vs TC59LM818DMB-40
K4C89183AF-GCF5 Samsung Semiconductor Check for Price DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 TC59LM818DMB-33 vs K4C89183AF-GCF5
K4C89183AF-ACFB0 Samsung Semiconductor Check for Price DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 TC59LM818DMB-33 vs K4C89183AF-ACFB0
K4C89183AF-ACF50 Samsung Semiconductor Check for Price DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 TC59LM818DMB-33 vs K4C89183AF-ACF50
K4C89183AF-GCFB0 Samsung Semiconductor Check for Price DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 X 1 MM PITCH, FBGA-60 TC59LM818DMB-33 vs K4C89183AF-GCFB0
TC59LM818DMG-33 Toshiba America Electronic Components Check for Price IC 16M X 18 DDR DRAM, 0.5 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-60, Dynamic RAM TC59LM818DMB-33 vs TC59LM818DMG-33

TC59LM818DMB-33 Frequently Asked Questions (FAQ)

  • Toshiba recommends a PCB layout with a solid ground plane and thermal vias under the package to improve heat dissipation. A minimum of 2oz copper thickness is recommended for the PCB.

  • The TC59LM818DMB-33 requires a specific power-up sequence to ensure proper operation. The VCC pin should be powered up first, followed by the VPP pin. The recommended power-up sequence is VCC > VPP > Input signals.

  • The TC59LM818DMB-33 is rated for operation from -40°C to +85°C. However, it's recommended to derate the device's performance at temperatures above 70°C to ensure reliability.

  • To ensure data integrity, it's recommended to use a power-down sequence that slowly ramps down the VCC and VPP voltages. Additionally, use a capacitor on the VCC pin to filter out any noise or voltage droops during power-up or power-down cycles.

  • Toshiba recommends a soldering temperature of 260°C (max) and a soldering time of 10 seconds (max) to prevent damage to the device.