Datasheets
TC59LM814BFT-22 by: Toshiba America Electronic Components

IC 16M X 16 DDR DRAM, 0.85 ns, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-66, Dynamic RAM

Part Details for TC59LM814BFT-22 by Toshiba America Electronic Components

Overview of TC59LM814BFT-22 by Toshiba America Electronic Components

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Price & Stock for TC59LM814BFT-22

Part # Distributor Description Stock Price Buy
Bristol Electronics   40
RFQ

Part Details for TC59LM814BFT-22

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TC59LM814BFT-22 Part Data Attributes

TC59LM814BFT-22 Toshiba America Electronic Components
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TC59LM814BFT-22 Toshiba America Electronic Components IC 16M X 16 DDR DRAM, 0.85 ns, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-66, Dynamic RAM
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Part Package Code TSOP2
Package Description TSOP2, TSSOP66,.46
Pin Count 66
Reach Compliance Code unknown
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.85 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 153 MHz
I/O Type COMMON
Interleaved Burst Length 2,4
JESD-30 Code R-PDSO-G66
JESD-609 Code e0
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4
Standby Current-Max 0.002 A
Supply Current-Max 0.17 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for TC59LM814BFT-22

This table gives cross-reference parts and alternative options found for TC59LM814BFT-22. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TC59LM814BFT-22, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MB81N26167B-60FN DDR DRAM, 16MX16, 0.85ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 FUJITSU Semiconductor Limited TC59LM814BFT-22 vs MB81N26167B-60FN
K4C561638F-TCD30 DDR DRAM, 16MX16, 0.85ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor TC59LM814BFT-22 vs K4C561638F-TCD30
TC59LM814CTG-60 IC 16M X 16 DDR DRAM, 0.85 ns, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP2-66, Dynamic RAM Toshiba America Electronic Components TC59LM814BFT-22 vs TC59LM814CTG-60
MB81N26167B-60FN 16MX16 DDR DRAM, 0.85ns, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 FUJITSU Limited TC59LM814BFT-22 vs MB81N26167B-60FN
MB81N26847B-60FN DDR DRAM, 16MX16, 0.85ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 FUJITSU Semiconductor Limited TC59LM814BFT-22 vs MB81N26847B-60FN
Part Number Description Manufacturer Compare
K4C561638F-TCD30 DDR DRAM, 16MX16, 0.85ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor TC59LM814BFT-22 vs K4C561638F-TCD30
MB81N26167B-60FN DDR DRAM, 16MX16, 0.85ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 FUJITSU Semiconductor Limited TC59LM814BFT-22 vs MB81N26167B-60FN
K4C561638C-TCA Synchronous DRAM, 16MX16, 0.85ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-66 Samsung Semiconductor TC59LM814BFT-22 vs K4C561638C-TCA
K4C561638C-TCD30 Synchronous DRAM, 16MX16, 0.85ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-66 Samsung Semiconductor TC59LM814BFT-22 vs K4C561638C-TCD30
MB81N26167B-60FN 16MX16 DDR DRAM, 0.85ns, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 FUJITSU Limited TC59LM814BFT-22 vs MB81N26167B-60FN
K4C561638C-TCD3 Synchronous DRAM, 16MX16, 0.85ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-66 Samsung Semiconductor TC59LM814BFT-22 vs K4C561638C-TCD3

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