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SZNS6A33AFT3G by:

TVS DIODE

Part Details for SZNS6A33AFT3G by onsemi

Overview of SZNS6A33AFT3G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for SZNS6A33AFT3G

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SZNS6A33AFT3G Part Data Attributes

SZNS6A33AFT3G onsemi
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SZNS6A33AFT3G onsemi TVS DIODE
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer ON SEMICONDUCTOR
Package Description R-PDSO-F2
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 40.6 V
Breakdown Voltage-Min 36.7 V
Breakdown Voltage-Nom 38.65 V
Clamping Voltage-Max 53.3 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.5 W
Reference Standard AEC-Q101; IEC-61000-4-2
Rep Pk Reverse Voltage-Max 33 V
Reverse Current-Max 5 µA
Reverse Test Voltage 33 V
Surface Mount YES
Technology ZENER
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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