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Part Details for SUP70060E-GE3 by Vishay Intertechnologies
Overview of SUP70060E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
Price & Stock for SUP70060E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
75AH9270
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Newark | Mosfet, N-Ch, 100V, 131A, 175Deg C, 200W Rohs Compliant: Yes |Vishay SUP70060E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.3200 / $2.1200 | Buy Now |
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DISTI #
SUP70060E-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 131A 3-Pin TO-220AB - Tape and Reel (Alt: SUP70060E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
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$0.9059 / $1.1508 | Buy Now |
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DISTI #
78-SUP70060E-GE3
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Mouser Electronics | MOSFET 100V Vds 20V Vgs TO-220 RoHS: Compliant | 74 |
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$0.9010 / $1.9900 | Buy Now |
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Future Electronics | N-Channel 100 V 5.8 mOhm 200 W ThunderFET Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 38 Weeks Container: Box | 0Box |
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$0.8500 / $0.9300 | Buy Now |
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DISTI #
SUP70060E-GE3
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TTI | MOSFET 100V Vds 20V Vgs TO-220 RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.8500 / $0.9700 | Buy Now |
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DISTI #
SUP70060E-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 131A, Idm: 240A Min Qty: 1 | 0 |
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$1.8400 / $2.8600 | RFQ |
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DISTI #
SUP70060E-GE3
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EBV Elektronik | Trans MOSFET N-CH 100V 131A 3-Pin TO-220AB (Alt: SUP70060E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 39 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SUP70060E-GE3
SUP70060E-GE3 CAD Models
SUP70060E-GE3 Part Data Attributes
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SUP70060E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUP70060E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 131A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 38 Weeks | |
| Date Of Intro | 2016-05-02 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 131 A | |
| Drain-source On Resistance-Max | 0.0064 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |