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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SUM60020E-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
10AH1177
|
Newark | Mosfet, N-Ch, 80V, 150A, 175Deg C, 375W, Channel Type:N Channel, Drain Source Voltage Vds:80V, Co... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 131 |
|
$1.2700 | Buy Now |
DISTI #
86AK6528
|
Newark | Mosfet, N-Ch, 80V, 150A, To-263 Rohs Compliant: Yes |Vishay SUM60020E-GE3 RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$2.2000 / $2.2100 | Buy Now |
DISTI #
10AH1177
|
Avnet Americas | N-CHANNEL 80-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 10AH1177) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack |
131 Partner Stock |
|
$2.4100 / $4.0500 | Buy Now |
DISTI #
SUM60020E-GE3
|
Avnet Americas | N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SUM60020E-GE3) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$1.3135 / $1.3956 | Buy Now |
DISTI #
78-SUM60020E-GE3
|
Mouser Electronics | MOSFETs TO263 N CHAN 80V RoHS: Compliant | 17095 |
|
$1.3900 / $3.3700 | Buy Now |
|
Future Electronics | Single N-Channel 80 V 2.1 mOhm Surface Mount TrenchFET® Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel |
800 Reel |
|
$1.4100 / $1.4300 | Buy Now |
|
Future Electronics | Single N-Channel 80 V 2.1 mOhm Surface Mount TrenchFET® Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 21 Weeks Container: Reel |
0 Reel |
|
$1.4100 / $1.4300 | Buy Now |
DISTI #
87818007
|
Verical | Trans MOSFET N-CH 80V 150A 3-Pin(2+Tab) D2PAK Min Qty: 800 Package Multiple: 800 Date Code: 2502 | Americas - 800 |
|
$2.2148 | Buy Now |
DISTI #
75713323
|
Verical | Trans MOSFET N-CH 80V 150A 3-Pin(2+Tab) D2PAK Min Qty: 40 Package Multiple: 1 | Americas - 131 |
|
$1.7787 / $1.9141 | Buy Now |
DISTI #
SUM60020E-GE3
|
TTI | MOSFETs TO263 N CHAN 80V RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel |
Americas - 4000 In Stock |
|
$1.3800 | Buy Now |
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SUM60020E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUM60020E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 150 A | |
Drain-source On Resistance-Max | 0.0021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 50 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 375 W | |
Pulsed Drain Current-Max (IDM) | 500 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 130 ns | |
Turn-on Time-Max (ton) | 86 ns |
The recommended PCB footprint for the SUM60020E-GE3 is a pad layout with a minimum size of 2.5 mm x 1.5 mm, with a 0.5 mm spacing between pads.
To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the pads. Avoid applying excessive heat or pressure, which can damage the component.
The SUM60020E-GE3 can operate safely within a temperature range of -40°C to 150°C, but it's recommended to operate within a range of -20°C to 125°C for optimal performance.
To prevent electrostatic discharge (ESD) damage, handle the SUM60020E-GE3 with an anti-static wrist strap or mat, and ensure that the PCB and components are properly grounded.
Store the SUM60020E-GE3 in a dry, cool place with a relative humidity of 60% or less, and avoid exposing it to direct sunlight or moisture.