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Transistors / Power Field-Effect Transistors / SUM110N10-09-E3
Datasheets
SUM110N10-09-E3 by:

Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN

Part Details for SUM110N10-09-E3 by Vishay Intertechnologies

Overview of SUM110N10-09-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SUM110N10-09-E3

Part # Distributor Description Stock Price Buy
DISTI # 06J8505
Newark N Channel Mosfet, 100V, 110A To-263, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:110A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SUM110N10-09-E3 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $3.7500
$3.7500 Buy Now
DISTI # SUM110N10-09-E3
Avnet Americas Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM110N10-09-E3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel 0
  • 1 $2.9369
  • 10 $2.8665
  • 30 $2.7962
  • 50 $2.6379
  • 100 $2.5676
  • 250 $2.4972
  • 500 $2.3741
$2.3741 / $2.9369 Buy Now
DISTI # SUM110N10-09-E3
Avnet Americas Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM110N10-09-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 800 $3.0160
  • 1,600 $2.9193
  • 3,200 $2.8226
  • 4,800 $2.7258
  • 6,400 $2.6203
  • 8,000 $2.4972
  • 80,000 $2.3741
$2.3741 / $3.0160 Buy Now
DISTI # 781-SUM110N10-09-E3
Mouser Electronics MOSFET 100V 110A 375W RoHS: Compliant 3300
  • 1 $4.1900
  • 10 $3.5200
  • 25 $3.3200
  • 100 $2.8400
  • 250 $2.6900
  • 500 $2.5300
  • 800 $2.1600
  • 2,400 $2.0400
$2.0400 / $4.1900 Buy Now
Future Electronics SUM110N10 Series 100 V 110 A 3.75 W SMT N-Channel Mosfet - TO-263 (D2PAK) RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 800
Reel
  • 800 $1.8600
  • 1,600 $1.8300
  • 2,400 $1.8000
$1.8000 / $1.8600 Buy Now
Bristol Electronics   423
RFQ
Bristol Electronics   8000
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-263 338
  • 1 $3.9492
  • 27 $2.6328
  • 96 $2.4353
$2.4353 / $3.9492 Buy Now
DISTI # SUM110N10-09-E3
TTI MOSFET 100V 110A 375W pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 12000
In Stock
  • 800 $2.1300
  • 1,600 $2.0800
  • 2,400 $2.0300
  • 5,600 $2.0000
$2.0000 / $2.1300 Buy Now
DISTI # SUM110N10-09-E3.
TTI MOSFET 100V 110A 375W pbFree: Pb-Free Min Qty: 10 Package Multiple: 10 Container: Cut Tape Americas - 0
  • 10 $4.1900
$4.1900 Buy Now
DISTI # SUM110N10-09-E3
TME Transistor: N-MOSFET, unipolar, 100V, 87A, 375W, D2PAK,TO263 Min Qty: 1 744
  • 1 $3.8300
  • 5 $3.4500
  • 25 $3.0500
  • 100 $2.7300
$2.7300 / $3.8300 Buy Now
DISTI # SMC-SUM110N10-09-E3
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 8000
RFQ
Chip 1 Exchange INSTOCK 1317
RFQ
Chip 1 Exchange INSTOCK 1317
RFQ
DISTI # SUM110N10-09-E3
Avnet Asia Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 (Alt: SUM110N10-09-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days 0
  • 800 $1.8869
  • 1,600 $1.5914
$1.5914 / $1.8869 Buy Now
DISTI # SUM110N10-09-E3
EBV Elektronik Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 (Alt: SUM110N10-09-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation N-Ch. 100V 0.0095R @ 10V WITH COC RoHS: Compliant Min Qty: 1 Package Multiple: 800 800
  • 800 $2.7800
$2.7800 Buy Now

Part Details for SUM110N10-09-E3

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SUM110N10-09-E3 Part Data Attributes:

Parametric Data
SUM110N10-09-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUM110N10-09-E3 Vishay Intertechnologies Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, TO-263, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 110 A
Drain-source On Resistance-Max 0.0095 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 437.5 W
Pulsed Drain Current-Max (IDM) 440 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SUM110N10-09-E3

This table gives cross-reference parts and alternative options found for SUM110N10-09-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUM110N10-09-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF3610S Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG SUM110N10-09-E3 vs IRF3610S
SUM110N10-09 Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Siliconix SUM110N10-09-E3 vs SUM110N10-09
SQM100N10-10_GE3 Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies SUM110N10-09-E3 vs SQM100N10-10_GE3
IRF3610STRLPBF Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG SUM110N10-09-E3 vs IRF3610STRLPBF
IRF3610STRL Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG SUM110N10-09-E3 vs IRF3610STRL
IRF3610STRR Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG SUM110N10-09-E3 vs IRF3610STRR
SUM110N10-09-E3 TRANSISTOR 110 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power Vishay Siliconix SUM110N10-09-E3 vs SUM110N10-09-E3
Part Number Description Manufacturer Compare
APT10M09LVFRG Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc SUM110N10-09-E3 vs APT10M09LVFRG
CSD19531KCS 100-V, N channel NexFET™ power MOSFET, single TO-220, 7.7 mOhm 3-TO-220 -55 to 175 Texas Instruments SUM110N10-09-E3 vs CSD19531KCS
APT10M09LVFRG Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation SUM110N10-09-E3 vs APT10M09LVFRG
IRFPS3810 Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN Infineon Technologies AG SUM110N10-09-E3 vs IRFPS3810
APT10M09LVFR Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc SUM110N10-09-E3 vs APT10M09LVFR
IRFPS3810 Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN International Rectifier SUM110N10-09-E3 vs IRFPS3810
IRFPS3810PBF Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPER-247, 3 PIN International Rectifier SUM110N10-09-E3 vs IRFPS3810PBF
SUM110N10-09 Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Siliconix SUM110N10-09-E3 vs SUM110N10-09
SUM110N10-09-E3 TRANSISTOR 110 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power Vishay Siliconix SUM110N10-09-E3 vs SUM110N10-09-E3
APT10M09LVR Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Advanced Power Technology SUM110N10-09-E3 vs APT10M09LVR

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